Philips BAV20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BAV20; BAV21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 17
1999 May 25
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 150 V, 200 V
• Repetitive peak reverse voltage:
max. 200 V, 250 V
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
handbook, halfpage
The diodes are type branded.
k
a
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25 2
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
repetitive peak reverse voltage
BAV20 − 200 V
BAV21 − 250 V
continuous peak reverse voltage
BAV20 − 150 V
BAV21 − 200 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A
total power dissipation T
=25°C; note 1 − 400 mW
amb
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25 3
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
THERMAL CHARACTERISTICS
forward voltage see Fig.3
I
= 100 mA − 1.0 V
F
I
= 200 mA − 1.25 V
F
reverse current see Fig.5
V
R=VRmax
V
R=VRmax
; Tj= 150 °C − 100 µA
− 100 nA
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 5pF
reverse recovery time when switched from IF= 30 mA to
− 50 ns
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.8
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25 4
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