Philips BAV170 Datasheet

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M3D088

BAV170

Low-leakage double diode

Product specification
Supersedes data of 1996 Mar 13

1999 May 11

Philips Semiconductors Product specification

Low-leakage double diode BAV170

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

APPLICATION

• Low-leakage current applications in
surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.

PINNING

PIN DESCRIPTION

1 anode
2 anode
3 common cathode

handbook, 4 columns

Marking code: JXp =made in Hong Kong; JXt = made in Malaysia.

21

3

Top view

Fig.1 Simplified outline (SOT23) and symbol.

21

3

MAM108

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1;

− 215 mA

see Fig.2
double diode loaded; note 1;

− 125 mA

see Fig.2

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t

=1µs − 4A

p

t

=1ms − 1A

p

t

=1s − 0.5 A

p

P

tot

T

stg

T

j

total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C

=25°C; note 1 − 250 mW

amb

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 11 2

Philips Semiconductors Product specification

Low-leakage double diode BAV170

ELECTRICAL CHARACTERISTICS

T

= 25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

=1mA − 900 mV

I

F

I

=10mA − 1000 mV

F

=50mA − 1100 mV

I

F

I

= 150 mA − 1250 mV

F

reverse current see Fig.5

V

= 75 V 0.003 5 nA

R

= 75 V; Tj= 150 °C 3 80 nA

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 − pF
reverse recovery time when switched from IF= 10 mA to

0.8 3 µs
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 11 3