Philips BAV103, BAV100, BAV102, BAV101 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
1/3 page (Datasheet)
M3D054
BAV100 to BAV103
General purpose diodes
Product specification
Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
FEATURES
• Small hermetically sealed glass
SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 50 V , 100 V, 150 V and 200 V
respectively
• Repetitive peak reverse voltage:
max. 60 V , 120 V, 200 V and 250 V
respectively
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.
DESCRIPTION
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
handbook, 4 columns
Cathode indicated by green band.
ka
MAM061
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 17 2
Philips Semiconductors Product specification
General purpose diodes BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
repetitive peak reverse voltage
BAV100 − 60 V
BAV101 − 120 V
BAV102 − 200 V
BAV103 − 250 V
continuous reverse voltage
BAV100 − 50 V
BAV101 − 100 V
BAV102 − 150 V
BAV103 − 200 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A
total power dissipation T
=25°C; note 1 − 400 mW
amb
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 17 3
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