Philips BAT86 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D050
BAT86
Schottky barrier diode
Product specification
Supersedes data of April 1992
1996 Mar 20
Philips Semiconductors Product specification
Schottky barrier diode BAT86
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
package.
APPLICATIONS
handbook, halfpage
k
a
• Ultra high-speed switching
• Voltage clamping
MAM193
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current −
average forward current
PCB mounting, lead length = 4 mm;
= 25 V; a = 1.57; δ = 0.5;
V
RWM
T
=50°C; see Fig.2
amb
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp≤ 10 ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−
−65
−
−65
50 V
200 mA
200 mA
500 mA
5A
+150 °C
125 °C
+125 °C
1996 Mar 20 2
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