Philips BAT85 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D050
BAT85
Schottky barrier diode
Product specification
Supersedes data of February 1992
1996 Mar 20
Philips Semiconductors Product specification
Schottky barrier diode BAT85
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
package.
APPLICATIONS
handbook, halfpage
k
a
• Ultra high-speed switching
• Voltage clamping
MAM193
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current −
average forward current
PCB mounting, lead length = 4 mm;
= 25 V; a = 1.57; δ = 0.5;
V
RWM
T
=50°C; see Fig.2
amb
repetitive peak forward current tp≤ 1s;δ0.5
non-repetitive peak forward current tp≤ 10 ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−
−65
−
−65
30 V
200 mA
200 mA
300 mA
5A
+150 °C
125 °C
+125 °C
1996 Mar 20 2
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