Philips BAT83, BAT82, BAT81 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20
Philips Semiconductors Product specification
Schottky barrier diodes BAT81; BAT82; BAT83
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
• Hermetically-sealed leaded glass
package
• Low diode capacitance.
APPLICATIONS
handbook, halfpage
k
a
MAM193
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
• Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
R
stg
j
continuous reverse voltage
BAT81
BAT82
BAT83
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp≤ 10 ms
storage temperature
junction temperature
−
−
−
−
−
−65
−
40 V
50 V
60 V
30 mA
150 mA
500 mA
150 °C
125 °C
1996 Mar 20 2
Loading...