Philips BAT754S, BAT754C, BAT754A, BAT754 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ge
M3D088
BAT754 series
Schottky barrier (double) diodes
Product specification 1999 Aug 05
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
FEATURES
• Very low forward voltage
• Guard ring protected
• Small plastic SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption
applications, e.g. hand-held
applications.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltageselectionoftheBAT54series.
Single diodes and double diodes with
different pinning are available.
PINNING
BAT754
PIN
ACS
1ak
2 n.c. k
3ka
handbook, 2 columns
Top view
1
2
1,a2k1,k2k1,a2
Fig.1 Simplified outline
(SOT23) and pin
configuration.
3
a
1
a
2
21
MGC421
a
1
k
2
3
12
MLC360
Fig.3 BAT754A diode
configuration (symbol).
3
12
MLC359
Fig.4 BAT754C diode
configuration (symbol).
MARKING
TYPE
NUMBER
MARKING
CODE
BAT754 2K
BAT754A 2L
BAT754C 2M
BAT754S 2N
3
12
n.c.
MLC357
Fig.2 BAT754 single diode
configuration (symbol).
3
12
MLC358
Fig.5 BAT754S diode
configuration (symbol).
1999 Aug 05 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 300 mA
non-repetitive peak forward current t = 8.3 ms half sinewave;
− 600 mA
JEDEC method
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
forward voltage see Fig.6
I
= 0.1 mA − 200 mV
F
I
=1mA − 260 mV
F
I
=10mA − 340 mV
F
I
=30mA − 420 mV
F
I
= 100 mA 600 − mV
F
reverse current VR= 25 V; note 1; see Fig.7 − 2 µA
diode capacitance f = 1 MHz; VR= 1 V; see Fig.8 − 10 pF
Note
1. Pulse test: t
= 300 µs; δ≤0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 500 K/W
ambient
Note
1. Refer to SOT23 standard mounting conditions.
1999 Aug 05 3
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