Philips BAT74 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D071

BAT74

Schottky barrier double diode

Product specification
Supersedes data of March 1991

1996 Mar 19

Philips Semiconductors Product specification

Schottky barrier double diode BAT74

FEATURES

• Low forward voltage

• Guard ring protected

• Small SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier double diode.
Two separate dies encapsulated in a
SOT143 small plastic SMD package.

PINNING

PIN DESCRIPTION

21

)

1

)

2

)

2

)

1

4

3

1

2

MAM194

1 cathode (k
2 cathode (k
3 anode (a
4 anode (a

handbook, halfpage

Marking code: L41.

43

Top view

Fig.1 Simplified outline (SOT143), pin configuration and symbol.

1996 Mar 19 2

Philips Semiconductors Product specification

Schottky barrier double diode BAT74

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
I

F

I

FRM

I

FSM

P
T
T
T

R

tot
stg
j
amb

continuous reverse voltage
continuous forward current −

repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms 600 mA
total power dissipation
storage temperature
junction temperature
operating ambient temperature

Double diode operation

V

I

F

I

FRM

R

continuous reverse voltage

continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5

≤ 25 °C; see Fig.2

T

amb

series connection −

−

−

−

−65

−

−65

−

−

30 V
200 mA
300 mA

230 mW
+150 °C
125 °C
+125 °C

30 V
60 V

(1)

110

mA

200 mA

Note

1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.

1996 Mar 19 3