Philips BAT721S, BAT721C, BAT721A, BAT721 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ge
M3D088
BAT721 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1998 Jan 21
1999 May 06
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
FEATURES
• Ultra high switching speed
• Low forward voltage
• Guard ring protected
• Small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
BAT721 L7∗
BAT721A L8∗
BAT721C L9∗
BAT721S L0∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
BAT721
PIN
ACS
1ak
2 n.c. k
3ka
handbook, 2 columns
Top view
1
2
1,a2k1,k2k1,a2
3
Fig.1 Simplified outline
(SOT23) and pin
configuration.
3
12
MLC357
Fig.2 BAT721 single diode
configuration (symbol).
a
1
a
2
21
MGC421
n.c.
a
1
k
2
3
12
MLC360
Fig.3 BAT721A diode
configuration (symbol).
3
12
MLC359
Fig.4 BAT721C diode
configuration (symbol).
3
12
MLC358
Fig.5 BAT721S diode
configuration (symbol).
1999 May 06 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FSM
R
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current tp= 8.3 ms half sinewave;
−
−
JEDEC method
T
stg
T
j
storage temperature
junction temperature
−65
−
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
continuous forward voltage see Fig.6
=10mA
I
F
I
= 100 mA
F
I
= 200 mA
F
continuous reverse current VR= 30 V; see Fig.7
=30V;Tj= 100 °C; see Fig.7
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.8
− 300 mV
− 420 mV
− 550 mV
− 15
− 3
40 50 pF
40 V
200 mA
1A
+150 °C
125 °C
µA
mA
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOT23 standard mounting conditions.
1999 May 06 3
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