Philips BAT720 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

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M3D088

BAT720

Schottky barrier diode

Product specification
Supersedes data of 1998 Jan 21

1999 May 26

Philips Semiconductors Product specification

Schottky barrier diode BAT720

FEATURES

• Ultra high switching speed

• Low forward voltage

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring for stress protection
in a small SOT23 plastic SMD package.

• Guard ring protected

• Small plastic SMD package.

APPLICATIONS

handbook, halfpage

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

12

Top view

PINNING

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

Marking code: L6p =made in Hong Kong; L6t = made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

3

3

1

2

n.c.

MAM394

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

I

FSM

T

stg

T

j

continuous reverse voltage
continuous forward current −

non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature

−

−

−65

−

40 V
500 mA
2A
+150 °C
125 °C

1999 May 26 2

Philips Semiconductors Product specification

Schottky barrier diode BAT720

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Refer to SOT23 standard mounting conditions.

forward voltage IF= 500 mA; see Fig.2
reverse current VR= 35 V; see Fig.3

=35V;Tj= 100 °C; see Fig.3

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.4

− 550 mV

− 100

− 10

µA

mA

60 90 pF

thermal resistance from junction to ambient note 1 500 K/W

1999 May 26 3