Philips BAT56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BAT56
Schottky barrier diode
Preliminary specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
December 1993
Philips Semiconductors Preliminary specification
Schottky barrier diode BAT56
FEATURES
• Low leakage current
• Low turn-on and high breakdown
voltage
• Ultra-fast switching speed.
DESCRIPTION
Silicon epitaxial Schottky barrier
diode with an integrated guard ring for
stress protection. Intended for high
speed switching, circuit protection
and voltage clamping applications.
The diode is encapsulated in a
SOD123 SMD plastic package.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
R
I
F
V
F
I
R
T
j
C
d
continuous reverse voltage 60 V
continuous forward current 30 mA
forward voltage IF = 1 mA 410 mV
reverse current VR = 60 V 200 nA
junction temperature 150 °C
diode capacitance VR = 1 V 1.6 pF
PIN CONFIGURATION
ka
MAM058
Top view
Fig.1 Simplified outline (SOD123) and symbol.
December 1993 2
Philips Semiconductors Preliminary specification
Schottky barrier diode BAT56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
I
FRM
I
FSM
T
stg
T
amb
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-a
continuous reverse voltage − 60 V
continuous forward current − 30 mA
repetitive peak forward current tp≤ 1 s; δ≤ 0.5 − 100 mA
non-repetitive peak forward
tp< 10 ms − 250 mA
current
storage temperature −65 +150 °C
operating ambient temperature −65 +150 °C
junction temperature − 150 °C
from junction to ambient; note 1 500 K/W
Note
1. Printed-circuit board mounting (SOD123 standard conditions).
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
V
(BR)R
I
R
C
d
forward voltage IF = 0.1 mA − 330 mV
I
= 1 mA − 410 mV
F
I
= 15 mA − 1V
F
reverse breakdown voltage IR = 10 µA60−V
reverse current VR = 30 V; note 1 − 100 nA
V
= 60 V; note 1 − 200 nA
R
diode capacitance VR = 1 V; f = 1 MHz − 1.6 pF
Note
1. Pulsed test: t
= 300 µs ; δ = 0.02.
p
December 1993 3
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