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DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D154
BAT254
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 19
1999 Apr 22
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Philips Semiconductors Product specification
Schottky barrier diode BAT254
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
• Very small ceramic SMD package.
APPLICATIONS
handbook, 4 columns
ak
cathode mark
ka
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
top viewside viewbottom view
Marking code: L4.
MAM214
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
30 V
200 mA
300 mA
600 mA
+150 °C
125 °C
+125 °C
1999 Apr 22 2
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Philips Semiconductors Product specification
Schottky barrier diode BAT254
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
C
d
forward voltage see Fig.2
= 0.1 mA
I
F
I
= 1mA
F
=10mA
I
F
I
=30mA
F
I
= 100 mA
F
reverse current VR= 25 V; note 1; see Fig.3
reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA: see Fig.5
diode capacitance f = 1 MHz; VR= 1 V; see Fig.4
240 mV
320 mV
400 mV
500 mV
800 mV
2
µA
5ns
10 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 315 K/W
Note
1. Refer to SOD110 standard mounting conditions.
1999 Apr 22 3