Philips BAT18 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAT18
Band-switching diode
Product specification
Supersedes data of April 1991
1996 Mar 13
Philips Semiconductors Product specification
Band-switching diode BAT18
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
max. 1.0 pF
• Low diode forward resistance:
max. 0.7 Ω.
APPLICATION
• Band switching.
Marking code: A2.
handbook, halfpage
21
3
2
n.c.
1
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage − 35 V
continuous forward current − 100 mA
storage temperature −55 +125 °C
junction temperature − 125 °C
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
I
C
r
F
R
d
D
forward voltage IF= 100 mA; see Fig.2 − 1.2 V
reverse current see Fig.3
= 20V − 100 nA
V
R
V
= 20 V; Tj=60°C − 1 µA
R
diode capacitance f = 1 MHz; VR= 20 V; see Fig.4 0.8 1.0 pF
diode forward resistance IF= 5 mA; f = 200 MHz; see Fig.5 0.5 0.7 Ω
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 2
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