Philips BAT160S, BAT160C, BAT160A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D087
BAT160 series
Schottky barrier double diodes
Product specification
1998 Dec 08
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
FEATURES
• Low switching losses
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power
supplies
• Rectification
• Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
MARKING
PINNING
BAT160
PIN
ACS
1k
1
a
1
2 n.c. n.c. n.c.
3k
4a
ge
1
123
Top view
2
, a2k1, k
a
2
2
4
MSB002 - 1
a
1
k
2
k1, a
2
age
13
4
2 n.c.
Fig.2 BAT160A diode
configuration (symbol).
age
13
4
2 n.c.
Fig.3 BAT160C diode
configuration (symbol).
MGL171
MGL172
TYPE NUMBER
MARKING
CODE
BAT160A AT160A
BAT160C AT160C
BAT160S AT160S
Fig.1 Simplified outline
(SOT223) and pin
configuration.
age
13
4
2 n.c.
Fig.4 BAT160S diode
configuration (symbol).
MGL173
1998 Dec 08 2
Philips Semiconductors Product specification
Schottky barrier double diodes BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current tp= 8.3 ms; half sinewave;
non-repetitive peak reverse current tp= 100 µs
storage temperature
junction temperature
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
−
−
JEDEC method
−
−65
−
60 V
1A
10 A
0.5 A
+150 °C
150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
forward voltage see Fig.5
I
= 100 mA
F
=1A
I
F
I
=2A
F
reverse current VR= 60 V; note 1; see Fig.6
= 60 V; Tj= 100 °C; note 1;
V
R
400 mV
650 mV
850 mV
350
8
µA
mA
see Fig.6
C
d
diode capacitance f = 1 MHz; VR= 4 V; see Fig.7
60 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Dec 08 3
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