Philips BAT120S, BAT120C, BAT120A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series
FEATURES
• Low switching losses
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power
supplies
• Rectification
• Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
MARKING
PINNING
BAT120
PIN
ACS
1k
1
a
1
2 n.c. n.c. n.c.
3k
4a
ge
1
123
Top view
2
, a2k1, k
a
2
2
4
MSB002 - 1
a
1
k
2
k1, a
2
age
13
4
2 n.c.
Fig.2 BAT120A diode
configuration (symbol).
age
13
4
2 n.c.
Fig.3 BAT120C diode
configuration (symbol).
MGL171
MGL172
TYPE NUMBER
MARKING
CODE
BAT120A AT120A
BAT120C AT120C
BAT120S AT120S
Fig.1 Simplified outline
(SOT223) and pin
configuration.
age
13
4
2 n.c.
Fig.4 BAT120S diode
configuration (symbol).
MGL173
1998 Oct 30 2
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current tp< 10 ms; half sinewave;
JEDEC method
non-repetitive peak reverse current tp= 100 µs
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
25 V
1A
10 A
0.5 A
+150 °C
125 °C
+125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
forward voltage see Fig.5
I
= 100 mA
F
I
=1A
F
reverse current VR= 20 V; note 1; see Fig.6
= 25 V; note 1; see Fig.6
V
R
= 20 V; Tj= 100 °C; note 1
V
R
diode capacitance f = 1 MHz; VR= 4 V; see Fig.7
260 300 mV
400 450 mV
80 500
− 1
− 10
µA
mA
mA
100 − pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Oct 30 3
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