Philips bat120 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D087
BAT120 series
Schottky barrier double diodes
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series
FEATURES
• Low switching losses
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power
supplies
• Rectification
• Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
MARKING
PINNING
BAT120
PIN
ACS
1k
1
a
1
2 n.c. n.c. n.c.
3k
4a
ge
1
123
Top view
2
, a2k1, k
a
2
2
4
MSB002 - 1
a
1
k
2
k1, a
2
age
13
4
2 n.c.
Fig.2 BAT120A diode
configuration (symbol).
age
13
4
2 n.c.
Fig.3 BAT120C diode
configuration (symbol).
MGL171
MGL172
TYPE NUMBER
MARKING
CODE
BAT120A AT120A
BAT120C AT120C
BAT120S AT120S
Fig.1 Simplified outline
(SOT223) and pin
configuration.
age
13
4
2 n.c.
Fig.4 BAT120S diode
configuration (symbol).
MGL173
1998 Oct 30 2
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current tp< 10 ms; half sinewave;
JEDEC method
non-repetitive peak reverse current tp= 100 µs
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
25 V
1A
10 A
0.5 A
+150 °C
125 °C
+125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
forward voltage see Fig.5
I
= 100 mA
F
I
=1A
F
reverse current VR= 20 V; note 1; see Fig.6
= 25 V; note 1; see Fig.6
V
R
= 20 V; Tj= 100 °C; note 1
V
R
diode capacitance f = 1 MHz; VR= 4 V; see Fig.7
260 300 mV
400 450 mV
80 500
− 1
− 10
µA
mA
mA
100 − pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Oct 30 3
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