Philips bat120 DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
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BAT120 series
Schottky barrier double diodes
Product specification Supersedes data of 1998 Jan 21
1998 Oct 30
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series

FEATURES

Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.

APPLICATIONS

Low power switched-mode power supplies
Rectification
Polarity protection.

DESCRIPTION

Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package

MARKING

PINNING

BAT120
PIN
ACS
1k
1
a
1
2 n.c. n.c. n.c. 3k 4a
ge
1
123
Top view
2
, a2k1, k
a
2
2
4
MSB002 - 1
a
1
k
2
k1, a
2
age
13
4
2 n.c.
Fig.2 BAT120A diode
configuration (symbol).
age
13
4
2 n.c.
Fig.3 BAT120C diode
configuration (symbol).
MGL171
MGL172
TYPE NUMBER
MARKING
CODE
BAT120A AT120A BAT120C AT120C BAT120S AT120S
Fig.1 Simplified outline
(SOT223) and pin configuration.
age
13
4
2 n.c.
Fig.4 BAT120S diode
configuration (symbol).
MGL173
1998 Oct 30 2
Philips Semiconductors Product specification
Schottky barrier double diodes BAT120 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
T
amb

ELECTRICAL CHARACTERISTICS

T
=25°C unless otherwise specified.
amb
continuous reverse voltage continuous forward current
non-repetitive peak forward current tp< 10 ms; half sinewave;
JEDEC method
non-repetitive peak reverse current tp= 100 µs storage temperature junction temperature operating ambient temperature
65
65
25 V 1A 10 A
0.5 A +150 °C 125 °C +125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
forward voltage see Fig.5
I
= 100 mA
F
I
=1A
F
reverse current VR= 20 V; note 1; see Fig.6
= 25 V; note 1; see Fig.6
V
R
= 20 V; Tj= 100 °C; note 1
V
R
diode capacitance f = 1 MHz; VR= 4 V; see Fig.7
260 300 mV 400 450 mV 80 500
1
10
µA
mA mA
100 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Refer to SOT223 standard mounting conditions.
1998 Oct 30 3
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