INTEGRATED CIRCUITS
74ABT241
Octal buffer/line driver (3-State)
Product specification |
1998 Jan 16 |
Supersedes data of 1996 Sep 25
IC23 Data Handbook
m n r
Philips Semiconductors |
Product specification |
|
|
|
|
|
|
|
Octal buffer/line driver (3-State) |
74ABT241 |
|
|
|
|
|
|
|
FEATURES
•Octal bus interface
•3-State buffers
•Power-up 3-State
•Output capability: +64mA/±32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model
•Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT241 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT241 device is an octal buffer that is ideal for driving bus lines. The device features two Output Enables (1OE, 2OE), each controlling four of the 3-State outputs.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
|
Tamb = 25°C; GND = 0V |
|||||
|
|
|
|
||
tPLH |
Propagation delay |
CL = 50pF; VCC = 5V |
2.6 |
ns |
|
tPHL |
An to Yn |
2.7 |
|||
|
|
||||
CIN |
Input capacitance |
VI = 0V or VCC |
3 |
pF |
|
COUT |
Output capacitance |
Outputs disabled; VO = 0V or VCC |
7 |
pF |
|
ICCZ |
Total supply current |
Outputs disabled; VCC = 5.5V |
50 |
μA |
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
|
|
|
|
|
20-Pin Plastic DIP |
±40°C to +85°C |
74ABT241 N |
74ABT241 N |
SOT146-1 |
|
|
|
|
|
20-Pin plastic SO |
±40°C to +85°C |
74ABT241 D |
74ABT241 D |
SOT163-1 |
|
|
|
|
|
20-Pin Plastic SSOP Type II |
±40°C to +85°C |
74ABT241 DB |
74ABT241 DB |
SOT339-1 |
|
|
|
|
|
20-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74ABT241 PW |
74ABT241PW DH |
SOT360-1 |
|
|
|
|
|
PIN CONFIGURATION |
|
|
|
PIN DESCRIPTION |
|
||||||
|
|
|
|
|
|
|
PIN NUMBER |
SYMBOL |
NAME AND FUNCTION |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2, 4, 6, 8 |
1A0 ± 1A3 |
Data inputs |
||
|
|
|
|
20 |
|
|
|
|
|
|
|
1OE |
|
1 |
VCC |
|
17, 15, 13, 11 |
2A0 ± 2A3 |
Data inputs |
||||
1A0 |
2 |
19 |
2OE |
|
|
|
|
|
|
||
|
18, 16, 14, 12 |
1Y0 ± 1Y3 |
Data outputs |
||||||||
2Y0 |
3 |
18 |
1Y0 |
|
|||||||
|
|
|
|
|
|
||||||
1A1 |
4 |
17 |
2A0 |
|
3, 5, 7, 9 |
2Y0 ± 2Y3 |
Data outputs |
||||
2Y1 |
5 |
16 |
1Y1 |
|
|
|
|
|
|
||
|
1, 19 |
|
|
2OE |
Output enables |
||||||
|
1OE, |
||||||||||
1A2 |
6 |
15 |
2A1 |
|
|
|
|
|
|
||
|
10 |
|
GND |
Ground (0V) |
|||||||
|
|
|
|
|
|
|
|
||||
2Y2 |
7 |
14 |
1Y2 |
|
|
|
|
|
|
||
|
20 |
|
VCC |
Positive supply voltage |
|||||||
1A3 |
8 |
13 |
2A2 |
|
|
||||||
2Y3 |
9 |
12 |
1Y3 |
|
|
|
|
|
|
||
GND |
10 |
11 |
2A3 |
|
|
|
|
|
|
||
|
|
|
|
SA00038 |
|
|
|
|
|
|
|
1998 Jan 16 |
2 |
853±1456 18867 |
Philips Semiconductors |
Product specification |
|
|
|
|
Octal buffer/line driver (3-State) |
74ABT241 |
|
|
|
|
LOGIC SYMBOL (IEEE/IEC) |
LOGIC SYMBOL |
1 |
|
|
EN |
2 |
18 |
4 |
16 |
6 |
14 |
8 |
12 |
19
EN
17 |
|
|
|
3 |
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
15 |
|
|
|
5 |
|
|
|
|
|
|
|
13 |
|
|
|
|
|
|
|
|
|
7 |
|
|
|
|
|
|
|
11 |
|
|
|
9 |
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
SA00040 |
|
|
|
|
|
|
2 |
1A0 |
1Y0 |
18 |
4 |
1A1 |
1Y1 |
16 |
6 |
1A2 |
1Y2 |
14 |
8 |
1A3 |
1Y3 |
12 |
1 |
1OE |
|
|
17 |
2A0 |
2Y0 |
3 |
15 |
2A1 |
2Y1 |
5 |
|
|
||
13 |
2A2 |
2Y2 |
7 |
|
|
||
11 |
2A3 |
2Y3 |
9 |
|
|
||
19 |
2OE |
|
|
|
|
|
|
|
|
SA00039 |
|
|
|
|
FUNCTION TABLE |
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
INPUTS |
|
|
OUTPUTS |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1An |
|
2OE |
2An |
|
1Yn |
2Yn |
|||
|
|
|
|
1OE |
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
L |
|
L |
|
|
H |
L |
|
L |
L |
|||
|
|
|
|
|
L |
|
H |
|
|
H |
H |
|
H |
H |
|||
|
|
|
|
|
H |
|
X |
|
|
L |
X |
|
Z |
Z |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H |
= High voltage level |
|
|
|
|
|
|
|
|
|||||
|
|
|
L |
= Low voltage level |
|
|
|
|
|
|
|
|
|||||
|
|
|
X |
= Don't care |
|
|
|
|
|
|
|
|
|||||
|
|
|
Z |
= High impedance ºoffº state |
|
|
|
|
|
|
|||||||
ABSOLUTE MAXIMUM RATINGS1, 2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
|
|
|
|
RATING |
|
|
UNIT |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VCC |
DC supply voltage |
|
|
|
|
|
|
|
|
|
|
±0.5 to +7.0 |
|
|
V |
|
|
IIK |
DC input diode current |
|
|
VI < 0 |
|
|
|
|
±18 |
|
|
|
mA |
|
|||
VI |
DC input voltage3 |
|
|
|
|
|
|
|
|
|
|
±1.2 to +7.0 |
|
|
V |
|
|
IOK |
DC output diode current |
|
|
VO < 0 |
|
|
|
|
±50 |
|
|
|
mA |
|
|||
V |
DC output voltage3 |
output in Off or High state |
|
|
±0.5 to +5.5 |
|
|
V |
|
||||||||
OUT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IOUT |
DC output current |
output in Low state |
|
|
128 |
|
|
|
mA |
|
|||||||
Tstg |
Storage temperature range |
|
|
|
|
|
|
|
|
|
|
±65 to 150 |
|
|
°C |
|
|
NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16 |
3 |
Loading...