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UNR9216
Datasheet
15 pgs201.69 Kb0

Panasonic UNR9215, UNR9214, UNR9213, UNR9212, UNR9211 Datasheet

...
Transistors with built-in Resistor
1.6±0.15
1.6±0.1
1.0±0.1
0.75±0.15
0.45±0.1
0.5
0.3
0 to 0.1
0.5
0.8±0.1 0.40.4
0.2
+0.1
-0.05
0.15
+0.1
-0.05
1
2
3
0.2±0.1
B
C
R1
R2
E
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
UN9211 8A 10kΩ 10kΩ
UN9212 8B 22kΩ 22kΩ
UN9213 8C 47kΩ 47kΩ
UN9214 8D 10kΩ 47kΩ
UN9215 8E 10kΩ —
UN9216 8F 4.7kΩ —
UN9217 8H 22kΩ —
UN9218 8I 0.51kΩ 5.1kΩ
UN9219 8K 1kΩ 10kΩ
UN9210 8L 47kΩ —
UN921D 8M 47kΩ 10kΩ
UN921E 8N 47kΩ 22kΩ
UN921F 8O 4.7kΩ 10kΩ
UN921K 8P 10kΩ 4.7kΩ
UN921L 8Q 4.7kΩ 4.7kΩ
UNR921M EL 2.2kΩ 47kΩ
UNR921N EX 4.7kΩ 47kΩ
UNR921AJ 8X 100kΩ 100kΩ
UNR921BJ 8Y 100kΩ —
UNR921CJ 8Z — 47kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
)
2
+0.05
1 : Base 2 : Emitter 3 : Collector SS–Mini Type Pakage
1.60±0.05
0.80±0.050.80
0.425 0.425
0.500.50
–0.03
1.60
1.00±0.05
0.80 0.80
+0.05
0.85
–0.03
–0.01
+0.03
0.12
0 to 0.1
1 : Base 2 : Emitter 3 : Collector SS–Mini Flat Type Pakage (J type)
Unit: mm
Unit: mm
0.27±0.02
–0.03
+0.05
0.70
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V 100 mA 125 mW 125 ˚C
–55 to +125 ˚C
Internal Connection
1
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN9211 0.5 UN9212/9214/921E/921D 0.2
Emitter cutoff current
UN9213/UNR921M/921N/UNR921AJ UN9215/9216/9217/9210/UNR921BJ UN921F/921K 1.0 UN9219 1.5
UN9218/921L/UNR921CJ 2.0 Collector to base voltage V Collector to emitter voltage V
UN9211 35
UN9212/921E 60
Forward current transfer ratio
UN9213/9214/921M/UNR921AJ/921CJ
UN9215*/9216*/9217*/9210*/UNR921BJ
UN921F/921D/9219 30
UN9218/921K/921L 20
UN921N 80 400 Collector to emitter saturation voltage V Output voltage high level V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN9213/921K/UNR921BJ VOC = 5V, VB = 3.5V, R1 = 1kΩ 0.2
UN921D V
UN921E VCC = 5V, VB = 6V, RL = 1kΩ 0.2
UNR921AJ VCC = 5V, VB = 5V, RL = 1kΩ 0.2 Transition frequency f
UN9211/9214/9215/921K 10
UN9212/9217 22
Input resis­tance
UN9213/921D/921E/9210 47
UN9216/921F/921L/UNR921N
UN9218 0.51
UN9219/UNR921M 1
UNR921AJ/921BJ 100
I
I
h
R
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V
80
VCE = 10V, IC = 5mA 160 460
IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 10V, R1 = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
(–30%) 4.7 (+30%) kΩ
0.1
* hFE rank classification (UN9215/9216/9217/9210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN9211/9212/9213/921L 0.8 1.0 1.2
UN9214 0.17 0.21 0.25
UN9218/9219 0.08 0.1 0.12
UN921D 4.7
Resis­tance ratio
Resistance between Emitter to Base
UN921E
UN921F 0. 47
UN921K 2.13
UN921M 0.047
UN921N 0.1
UNR921AJ 1.0
UNR921CJ
R1/R
R
2
2
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
2.14
–30% 47 30% kΩ
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
150
)
125
mW
(
T
100
75
50
25
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Characteristics charts of UN9211
— V
I
C
CE
160
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
IB=1.0mA
0.9mA
0.8mA
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
V
100
)
V
(
30
CE(sat)
10
0.3
0.1
0.03
— I
CE(sat)
3
1
–25˚C
25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V Ta=25˚C
)
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
Transistors with built-in Resistor
Characteristics charts of UN9212
UN1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
— V
I
C
160
140
IB=1.0mA
)
mA
(
C
Collector current I
0.9mA
120
100
80
60
40
20
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
100
)
V
(
CE(sat)
0.3
0.1
0.03
— I
CE(sat)
30
10
3
1
25˚C
–25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V Ta=25˚C
)
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN9213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
100
30
10
Output current I
3
1
0.4
)
100
)
V
(
CE(sat)
0.3
0.1
0.03
Input voltage VIN (V
30
10
3
1
–25˚C
V
CE(sat)
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
C
VCE=10V
Ta=75˚C
)
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
1 3 10 30 100
Collector current IC (mA
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
5
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