Panasonic PNA1601M User Manual

PNA1601M

Phototransistors

PNA1601M (PN166)

Silicon NPN Phototransistor

For optical control systems

Features

High sensitivity

Wide spectral sensitivity, suited for detecting various kinds of LEDs

Ultraminiature, thin side-view type package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter		Symbol		Ratings	Unit
Collector to emitter voltage		V	CEO	20	V
Collector current	I		C	20	mA
Collector power dissipation			PC	50	mW
Operating ambient temperature		T opr		–25 to +65	˚C
Storage temperature	T		stg	–30 to +85	˚C

Electro-Optical Characteristics (Ta = 25˚C)

			restthe			Unit : mm
		max.				1.4± 0.2
	0.8	0.5	2.6±	0.2		1.2± 0.2
			Gate	C0.5	0.8	(0.4)
0.2	1.7			R0.55
2.5±
	2.0	0.7

2-0.7

12.5± 1.0

2-0.45 0.15

2 1

2.0

1: Collector

2: Emitter

Parameter

Symbol

Conditions

min

typ

max

Unit

Dark current

I

CEO

V

CE

= 10V

0.2

µ A

Sensitivity to infrared emitters

*1

V

CE

= 10V, H = 15

µ W/cm

2

3

µ A

S IR

Peak sensitivity wavelength

λ P

V

CE

= 10V

850

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

35

deg.

Rise time

t

*2

V

CC

= 10V, I

CE(L)

= 5mA

4

µ s

r

Fall time

t

*2

RL

= 100 Ω

4

µ s

f

Collector saturation voltage

V

CE(sat)

ICE(L)

= 10 µ

A, H = 15 µ W/cm

2

0.5

V

*1 Measurements were made using infrared light (										λ = 940 nm) as a light source.
*2 Switching time measuring circuit
		Sig.IN						V CC		(Input pulse)
											90%
									Sig.OUT	(Output pulse)	10%
50Ω								RL		td
										tr	tf

td : Delay time

tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value)

tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)

Note) The part number in the parenthesis shows conventional part number.

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Phototransistors																											PNA1601M
			PC	— Ta									ICE(L)		— V		CE									ICE(L)	— L
	60									2.0													10
											Ta = 25˚C													V CE	= 10V
											T = 2856K													Ta = 25˚C
	50															L = 1000 lx								T = 2856K
(mW)									(mA)	1.6												(mA)
																								1
C
	40								CE(L)													CE(L)
										1.2
P	30								I													I	10 –1
Collector power dissipation																	500 lx
									Collector photo current	0.8												Collector photo current
	20
																							10 –2
	10									0.4
	0										0												10 –3						2		10 3
	– 20	0	20	40		60	80	100			0	4	8		12		16	20		24				1		10		10
	Ambient temperature			Ta		(˚C )					Collector to emitter voltage				V			CE	(V)						Illuminance		L (lx)
			ICEO	— Ta									ICE(L)		— Ta									Spectral sensitivity characteristics
	10									10							V CE	= 10V					100						V CE	= 10V
	V CE	= 10V
																	T = 2856K												Ta = 25˚C
									(mA)														80
	1
(nA)									CE(L)		1											(%)
CEO																							60
																						S
	10 –1								Collector photo current I													Relative sensitivity
Dark current I																							40
										10 –1
	10 –2
																							20
	10 –3									10 –2														0
	– 40	0		40		80		120			– 40		0		40		80			120				600	700	800	900	1000		1100	1200
	Ambient temperature			Ta		(˚C )						Ambient temperature			Ta	(˚C )									Wavelength		λ		(nm)
	Directivity characteristics							20˚					tr — I CE(L)													tf — I CE(L)
				0˚		10˚
				100						10	3						V CE	= 10V					10	3					V CE	= 10V
																	Ta = 25˚C												Ta = 25˚C
				90
				80	(%)			30˚		10 2													10 2
				70					s)
					S																	s)
				60	sensitivity			40˚	(	10							RL = 1k Ω					(	10						RL = 1k Ω
									r													f
				50																									500Ω
									t									500Ω
				40	Relative			50˚	Rise time									100 Ω				Fall time t							100 Ω
				30				60˚			1													1
				20				70˚
								80˚		10 –1													10 –1
								90˚
										10 –2			10 –1										10 –2		10 –1
											10 –2				1		10			10	2			10 –2			1		10		10	2
											Collector photo current			I			CE(L)	(mA)						Collector photo current			I		CE(L)	(mA)
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