Panasonic PNA1601M User Manual
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Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Ultraminiature, thin side-view type package
2.6±0.2 1.2±0.2
Gate the rest
0.5 max.
0.8
1.72.0
2.5±0.212.5±1.0
0.7
R0.55
2-0.7
Unit : mm
1.4±0.2
0.8C0.5
(0.4)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
C
P
C
T
opr
stg
20 V
20 mA
50 mW
–25 to +65 ˚C
–30 to +85 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Sensitivity to infrared emitters
Peak sensitivity wavelength
CEO
S
λ
Acceptance half angle θ
Rise time t
Fall time t
Collector saturation voltage
*1
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Switching time measuring circuit
Sig.IN
50Ω R
V
CC
L
V
CE(sat)ICE(L)
(Input pulse)
Sig.OUT 10%
(Output pulse)
VCE = 10V 0.2 µA
*1
VCE = 10V, H = 15µW/cm
IR
VCE = 10V 850 nm
P
Measured from the optical axis to the half power point
*2
VCC = 10V, I
r
*2
RL = 100Ω 4 µs
f
= 5mA 4 µs
CE(L)
= 10µA, H = 15µW/cm
90%
t
d
t
r
t
f
2-0.45
21
2.0
2
3 µA
0.15
1: Collector
2: Emitter
35 deg.
2
td : Delay time
: Rise time (Time required for the collector photo current to
t
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
0.5 V
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors PNA1601M
— Ta
P
60
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
— Ta
I
10
1
CEO
VCE = 10V
(nA)
CEO
–1
10
–2
Dark current I
10
— V
I
2.0
Ta = 25˚C
T = 2856K
1.6
(mA)
CE(L)
1.2
0.8
0.4
Collector photo current I
0
02016812424
CE(L)
CE
L = 1000 lx
500 lx
10
V
Ta = 25˚C
T = 2856K
1
(mA)
CE(L)
–1
10
–2
10
Collector photo current I
–3
10
1
Collector to emitter voltage VCE (V)
10
(mA)
CE(L)
–1
10
— Ta
I
CE(L)
VCE = 10V
T = 2856K
1
Spectral sensitivity characteristics
100
80
60
40
Relative sensitivity S (%)
20
Collector photo current I
I
CE(L)
= 10V
CE
10 10
Illuminance L (lx)
— L
2
V
CE
Ta = 25˚C
= 10V
3
10
–3
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
Relative sensitivity S (%)
30
20
2
30˚
40˚
50˚
60˚
70˚
80˚
90˚
–2
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
— I
t
r
CE(L)
3
10
2
10
(µs)
r
10
1
Rise time t
–1
10
–2
10
10
–1
–2
10
Collector photo current I
VCE = 10V
Ta = 25˚C
RL = 1kΩ
10 10
1
CE(L)
500Ω
100Ω
(mA)
2
0
700 800 900 1000 1100 1200
600
Wavelength λ (nm)
t
3
10
2
10
(µs)
f
10
1
Fall time t
–1
10
–2
10
10
–1
–2
10
Collector photo current I
f
— I
CE(L)
1
VCE = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
10 10
(mA)
CE(L)
2
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