Panasonic M-DW1 Installation Manual

INSTRUCTION MANUAL

LED Beam Reflective Type Wafer Mapping Sensor

M-DW1

Thank you very much for using SUNX sensors. Please read this Instruction Manual carefully and thoroughly for the correct and optimum use of this sensor. Kindly keep this manual in a convenient place for quick reference.

䢇 Make sure to carry out the wiring in the power

supply off condition.

䢇

Take care that wrong wiring will damage the sensor.

䢇

Verify that the supply voltage variation is within the rating.

䢇

If power is supplied from a commercial switching regulator, ensure that the frame ground (F.G.) terminal of the power supply is connected to an actual ground.

䢇 In case noise generating equipment (switching

regulator, inverter motor, etc.) is used in the vicinity of this product, connect the frame ground (F.G.) terminal of the equipment to an actual ground.

䢇 Do not use during the initial transient time (0.5 sec.)

after the power supply is switched on.

䢇 Extension up to total 10m is possible with 0.15mm

, or more, cable. However, in order to reduce noise, make the wiring as short as possible.

䢇

Do not run the wires together with high-voltage lines or power lines or put them in the same raceway. This can cause malfunction due to induction.

䢇 Take care that the sensor is not directly exposed to

fluorescent light from a rapid-starter lamp or a high frequency lighting device, as it may affect the sensing performance.

䢇 Avoid dust, dirt, and steam. 䢇 Take care that the sensor does not come in direct

contact with water, oil, grease, or organic solvents, such as, thinner, etc.

䢇 Take care that dust, etc., does not collect on the

sensing surfaces, as it may result in malfunction. Should it collect, clean the sensing surfaces by blowing air or wiping them gently with a soft cloth.

䢇 Make sure to use an isolation transformer for the

DC power supply. If an auto-transformer (single winding transformer) is used, this product or the power supply may get damaged.

䢇 In case a surge is generated in the used power

supply, connect a surge absorber to the supply and absorb the surge.

䢇

Set the distance between the sensor detection surface and the wafer edge to be 45mm and mount the sensor so that sensing is done at an angle of 12.5˚ with respect to the wafer. Mount using M4 (length 16mm) screws. The tightening torque should be 1.2N•m or less. Further, although the sensing distance may change due to variation in the wafer position (wafer protrusion, orientation flat position, etc.), if it is within

mm, stable sensing is possible.

䢇

This product is not a safety sensor. Its use is not intended or designed to protect life and prevent body injury or property damage from dangerous parts of machinery. It is a normal object detection sensor.

䢇

In case the product may be subjected to electrostatic discharge, make sure to ground the stainless case.

MOUNTING

PART DESCRIPTION

SPECIFICATIONS

CAUTIONS

Notes: 1) In case of 8 inch or less wafers, the wafer pitch,

orientation flat or the surface condition may affect the sensing.

Notes: 2) Polished wafers, etc., which have a sharp edge

cannot be detected since they do not reflect the light in the light receiving direction.

Notes: 3) Since the position of the orientation flat may vary by

Ⳳ20˚ due to its rotation, refer to DETECTING

WAFER HAVING ORIENTATION FLAT for detection

of a wafer having an orientation flat.

Notes: 4) This is the pitch of an 8 inch wafer near its center

region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal. For details, refer to SENSING SIGNAL.

M4 screw (Length 16mm)

Cassette

Sensor

Robot arm

45mm

Mounting angle

12.5˚ Sensor axis

Spot position

Wafer center axis

Orientation flat

Detection

12.5

ⴗ

12.5

ⴗ

Note: If the wafer center axis and the sensor axis lie along a

straight line, detection is not possible. Always mount the sensor at an angle to the wafer.

䢇

When detecting a wafer having an orientation flat, mount the sensor so that a portion other than the orientation flat is detected. Further, arrange to detect the wafer from two different angles by moving the robot arm, etc., and OR the signal so obtained.

I/O CIRCUIT DIAGRAMS

Brown : 12 to 24V DC Blue : 0V Black : Out Pink : Light emission control Violet : Ext. sensitivity selection

LowMidHighMaxSW

LLLLHHH

PNP

NPN

OFDNON

D-ONL-ON

Sensitivity SW

M-DW1

Wafer Mapping Sensor

STB OUT

SET 1 2 3 4

MADE IN JAPAN

Timer operation mode switch

Output operation mode switch

Output setting switch

Operation indicator (Orange)

Sensitivity selection switch

Sensitivity setting button

Stability indicator (Green)

PNP

NPN

Users' circuitInternal circuit

Color code

(Brown)

ⳭV

(Black) Output

100mA max.

12 to 24V DC

Ⳳ10%

(Pink) Ext. light emission control input

(Violet) Ext. sensitivity selection input

(Blue) 0V

ZD2

Tr2

ZD1

Tr1

Sensor circuit

Load

Ⳮ ⳮ

Symbols...D: Reverse supply polarity protection diode

D1, ZD2: Surge absorption zener diode

1: NPN output transistor

2: PNP output transistor

Non-voltage contact or PNP open-collector transistor

• External emission control input 0 to 3V, or 9V to

ⳭV (26.4V max.): Emission halted

Open, or 4 to 8V: Emission

• External sensitivity selection input 0 to 3V, or 9V to

ⳭV (26.4V max.): Input ON

Open, or 4 to 8V: Input OFF

Non-voltage contact or NPN open-collector transistor

• External emission control input 0 to 3V, or 9V to

ⳭV (26.4V max.): Emission halted

Open, or 4 to 8V: Emission

• External sensitivity selection input 0 to 3V, or 9V to

ⳭV (26.4V max.): Input ON

Open, or 4 to 8V: Input OFF

Symbols...D: Reverse supply polarity protection diode

D1, ZD2: Surge absorption zener diode

1: NPN output transistor

2: PNP output transistor

䢇 The output can be selected as NPN output or PNP

output by the output setting switch.

DETECTING WAFER HAVING ORIENTATION FLAT

Top-view

NPN output

PNP output

OUTPUT OPERATION

䢇 The output operation can be set either Light-ON or

Dark-ON by the output operation mode switch.

: Light-ON : Dark-ON

Output operation mode switch

1 2 3 4 1 2 3 4

Designation

Item

Model No. Center measuring distance Sensing object

Detectable surface Sensing angle Wafer pitch Suitable cassette

Supply voltage Current consumption

Output

Output operation

Short-circuit protection Response time External light

emission control input External sensitivity

selection input Operation indicator

Stability indicator

Timer function Ambient

temperature Ambient humidity Emitting element

Material Cable

Weight

LED beam reflective type wafer mapping sensor

M-DW1

45mm 3 inch or larger semiconductor wafer (Note 1) Surface having a side edge which reflects

light in the light receiving direction (Note 2)

12.5˚Ⳳ5˚ (Note 3)

Separate sensing is possible at normal sensitivity for 3mm pitch or more (Note 4)

SEMI standard FOUP cassette / open cassette 12 to 24V DCⳲ10% Ripple P-P 10% or less

65mA or less

NPN output / PNP output, selectable with output selection switch

NPN open-collector transistor

• Maximum sink current: 100mA

•

Applied voltage: 30V DC or less (between output and 0V)

•

Residual voltage: 1V or less (at 100mA sink current)

0.4V or less (at 16mA sink current)

PNP open-collector transistor

• Maximum source current: 100mA

•

Applied voltage: 30V DC or less (between output and +V)

•

Residual voltage: 1V or less (at 100mA source current)

0.4V or less (at 16mA source current)

Light-ON / Dark-ON, selectable by switch

Incorporated (restored automatically)

500!s or less

0 to 3V, or 9V toⳭV (26.4V max.): Emission halted Open, or 4 to 8V: Emission

0 to 3V, or 9V toⳭV (26.4V max.): Input ON Open, or 4 to 8V: Input OFF

Orange LED (lights up when the output is ON) Green LED (lights up under stable light

received condition or stable dark condition)

Approx. 2ms fixed OFF-delay timer, switchable either effective or ineffective

0 to

Ⳮ55˚C (No dew condensation)

Storage:

ⳮ10 toⳭ70˚C

35 to 85% RH, Storage: 35 to 85% RH

LED (modulated)

Enclosure: ABS / SUS301 Lens: Acrylic

0.15 mm25-core cabtyre cable, 300mm long

75g approx.

Note: Make sure to operate the output setting switch in the

power supply off condition. If it is operated with power on, it may get damaged.

ZD2

Tr2

ZD1

Tr1

Sensor circuit

Color code

(Brown)ⳭV

Load

(Black) Output 100mA max.

(Pink) Ext. light emission control input (Violet) Ext. sensitivity selection input

(Blue) 0V

Users' circuitInternal circuit

Ⳮ

ⳮ

12 to 24V DC

Ⳳ10%

䢇 Sensing signal width

• The sensing signal which is output from the sensor

is as follows

The sensing signal has a width larger than the thickness of the wafer.

The signal width also varies with the reflectivity of the sensing edge. High reflectivity (polish, aluminum film, etc.): Large signal width Example:

Low reflectivity (nitride or oxide film processed): Small signal width Example:

The signal width also changes with the sensing distance or the sensing angle.

Maximum sensitivity (MAX)

Medium sensitivity (MID)

High sensitivity (HIGH)

Low sensitivity (LOW)

OFF

DIMENSIONS (Unit: mm)

SENSING SIGNAL

LIGHT EMISSION CONTROL FUNCTION

TIMER FUNCTION

External sensitivity selection input

SENSITIVITY SELECTION SETTING

SENSITIVITY SETTING

䢇

Although this sensor has an optical system whitch makes it difficult for the background to affect the detection, the background may have an effect when detecting small diameter wafers. Hence, if the background gets detected, or the stability indicator (green) lights off when the cassette has no wafers, sensitivity setting should be done so that the background does not have an effect. However, the sensitivity reduces when sensitivity setting is done.

䢇 Sensitivity setting is done when the background

affects the detection. Press the sensitivity setting button in the actual environment where the sensor is to be used (place at which the background has an effect), but without any wafers being present.

䢇

The sensitivity is set at the time the sensitivity setting button is released. After the sensitivity setting, the output once turns into the detection state. If the sensitivity setting has been successfully done, the output turns to the non-detection state after 25ms approx. and the sensitivity is set so that the background does not have an effect. In case the output remains in the detection state, since this is a condition in which detection cannot be done, readjust the sensitivity selection switch. In this case, set the sensitivity selection switch to one level higher sensitivity than the present sensitivity level. However, if the sensitivity selection switch is already at maximum sensitivity (MAX), move the background further away.

䢇

If sensitivity setting is done with nothing in the background, the sensitivity returns to the initial value.

䢇

Since the sensitivity is stored in an EEPROM when the sensitivity setting button is pressed, the setting need not be repeated when the power is switched on again. However, note that the EEPROM has a lifetime and its guaranteed life is 100,000 write operation cycles.

䢇

Sensitivity can be selected from four levels by appropriate setting of the sensitivity selection switch (2 bit).

䢇 The external sensitivity selection input (violet)

becomes ON when it is connected to 0 to 3V, or 9V to

ⳭV (26.4V max.), and becomes OFF when it is

kept open or connected to 4 to 8V.

䢇 If the sensitivity is selected with the external

sensitivity selection input, set the sensitivity selection switch as shown in the table below.

䢇 Using the timer operation mode switch, it is possi-

ble to select an approx. 2ms fixed OFF-delay timer. Since the output is extended by a fixed period, it is useful when the connected device has a slow response time.

䢇 Light emission is halted when the external light

emission control input (pink) is connected to 0 to 3V, or 9V to

ⳭV (26.4V max.).

In this case, the output turns to the dark state.

Setting method

Time Chart

• From the above, for determining the position of the wafer from the sensing signal, calculate the center position of the signal's ON region, while taking into consideration the response time.

1st cross pitch (small)

Orientation flat length

Normal sensing position

2nd cross pitch (large)

Cross-condition wafer

Normal wafer

• The calculated pitch based on the wafer size is given in the table below.

• From the above, it is seen that, since the pitch of the cross-condition wafer reduces, the pitch resolution required for high reflectivity wafers becomes more stringent than the specified resolution of 3mm. Hence, the sensing signal from two wafers may not be resolved and may become a continuous signal. Further, the sensing signal may also change due to the sensitivity setting, the reflectivity of the wafer, and the sensing conditions (sensing distance or sensing angle). For the above reasons, in case of wafers which have been cross-inserted, since the small crosspitch side is similar to overlapping wafers, the sensing signal of two wafers may become a continuous signal or may get resolved.

• If the orientation flat happens to get in the position of sensing, sensing is not possible in one of the two sensing positions. Therefore, if the wafer is crossinserted, a resolved signal may not be output, and in this case, the information on the wafer position calculated from the sensing signal will be erroneous.

"4.2 cable, 300mm long

2-"4.5 mounting holes

Beamreceiving part

Beam emitting part

18.3

80.670

PRINTED IN JAPAN

http://www.sunx.co.jp/

Head Office

SUNX Limited

Phone: ⴐ81-(0)568-33-7861 FAX: ⴐ81-(0)568-33-8591

Overseas Sales Dept.

2431-1 Ushiyama-cho, Kasugai-shi, Aichi, 486-0901, Japan Phone: ⴐ81-(0)568-33-7211 FAX: ⴐ81-(0)568-33-2631

Sensitivity selection switch

Sensitivity

Maximum sensitivity (MAX)

High sensitivity (HIGH)

Medium sensitivity (MID)

Low sensitivity (LOW)

Used for low reflectivity wafers with nitride or oxide film processing, or for thin wafers (0.3 to 0.4mm)

Sensitivity between maximum sensitivity and medium sensitivity

Used for high reflectivity polished wafers, etc., or for 3mm wafer pitch

Lowest possible sensitivity setting

1 2 3 4

3 inch (75mm) 4 inch (100mm) 5 inch (125mm) 6 inch (150mm) 8 inch (200mm)

4.75mm

6.35mm

22.2mm

32.5mm

42.5mm

57.5mm

59.3mm

0.380mm

0.625mm

0.675mm

0.725mm

1.58mm

1.54mm

1.52mm

1.43mm

2.19mm

3.17mm

3.21mm

3.23mm

3.33mm

4.16mm

Wafer size

Normal pitch

Orientation flat length

Wafer thickness

Cross pitch (small)

Cross pitch (large)

Sensitivity selection switch

Ext.sensitivity selection input

Sensitivity

Used for low reflectivity wafers with nitride or oxide film processing, or for thin wafers (0.3 to 0.4mm)

Used for high reflectivity polished wafers, etc., or for 3mm wafer pitch

Sensitivity between maximum sensitivity and medium sensitivity

Lowest possible sensitivity setting

1 2 3 4

m The cable

direction can be changed.

Wafer thickness t=0.6mm

Signal width

1.5mm approx.

Wafer thickness t=0.6mm

Signal width

1.1mm approx.

䢇 Narrow pitch sensing signal width

• In case of

DETECTING WAFER HAVING ORI-

ENTATION FLAT, when the sensor is mounted at

positions which avoid the wafer orientation flat, the pitch of a cross-condition wafer changes as shown in the figure below.

1 2 3 4

Sensitivity selection switch

: Approx. 2ms

OFF-delay timer

1 2 3 4 1 2 3 4

Timer operation mode switch

: Without

timer

Sensing condition

Operation

Normal

With timer

T T T

Timer period: T= 2ms approx.

Sensing Not

sensing

OFF

External light emission control input

Output

In case of Light-ON

OFF

T1 T2

OFF

T1=5ms, T2=20ms max.

Sensitivity setting button

NPN

PNP

High reflectivity wafer

Low reflectivity wafer

Wafer thickness t=0.6mm

Sensing signal width 1.5mm approx. (Example)

Sensing signal width 1.1mm approx. (Example)

ON OFF