Page 1
This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LN77L
GaAIAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: PO = 18 mW (typ.)
Fast response and high-speed modulation capability: fC = 20 MHz (typ.)
Wide directivity: θ = 20° (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation P
Forward current I
Pulse forward current
*
Reverse voltage V
Operating ambient temperature T
Storage temperature T
Note) *: f = 100 Hz, Duty cycle = 0.1%
D
F
I
FP
R
opr
stg
190 mW
100 mA
1 A
3 V
–25 to +85
–30 to +100
°C
°C
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Radiant power P
Reverse current I
Forward voltage V
Peak emission wavelength
Spectral half band width
Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Modulation total power output 3 dB frequency to fall from 1 MHz.
Cutoff frequency: 20 MHz
fC : 10 × log
3. LED might radiate red light under large current drive.
4. *: A light detection element uses a silicon diode have proofread a load with a standard device.
PO at f = f
PO at f = 1 MHz
C
= –3
IF = 50 mA 10 18 mW
O
VR = 3 V 10 µA
R
IF = 100 mA 1.6 1.9 V
F
IF = 50 mA 860 nm
λ
P
IF = 50 mA 40 nm
Δλ
The angle when the radiant power is halved. 20
θ
°
Publication date: October 2008
SHC00023CED
1
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC).
Ambient temperature Ta (°C)
Forward current I
F
(mA)
120
100
80
60
40
20
0
0 20 40 60 80 100
−25
10
2
10
1
Pulse forward current IFP (mA)
Relative radiant power ∆P
O
10
3
10
2
10
−2
10
−1
1 10
(1) tW = 10 µs
f = 100 Hz
(2) DC
Ta = 25°C
2.2
1.8
1.4
1.0
0.6
Ambient temperature Ta (°C)
Forward voltage V
F
(V)
−40 0 40 80 120
IF = 100 mA
50 mA
Duty cycle (%)
Pulse forward current I
FP
(A)
tW = 10 µs
Ta = 25°C
10
2
10
1
10
−1
10 10
2
1
10
−2
10
−1
10
4
10
3
10
2
1
10
Forward voltage VF (V)
Pulse forward current I
FP
(mA)
1 3 52 4
10
−1
0
tW = 10 µs
f = 100 Hz
Ta = 25°C
(1)
(2)
10
1
Ambient temperature Ta (°C)
IF = 50 mA
Relative radiant power ∆P
O
−40 0 40 80
10
−1
920
900
880
860
840
820
Ambient temperature Ta (°C)
IF = 50 mA
Peak emission wavelength λ
P
(nm)
−40 0 40 80 120
100
60
80
40
20
Wavelength λ (nm)
Relative radiant intensity (%)
800 850 900 950 1 000 1 050
0
750
IF = 50 mA
Ta = 25°C
20
90
100
80
70
60
50
40
30
Relative radiant intensity (%)
0° 10° 20°
30°
40°
50°
60°
70°
80°
90°
IF T
a
IFP Duty cycle
IFP V
F
∆
PO I
FP
VF T
a
∆
PO T
a
λP T
a
Relative radiant intensity
λ Directive characteristics
LN77L
2
SHC00023CED
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Package (Unit: mm)
LEXLTN2S0002
LN77L
Pin name
1: Anode
2: Cathode
SHC00023CED
3
Page 4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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