Panasonic LN172 Datasheet

Infrared Light Emitting Diodes

LN172

GaAlAs Infrared Light Emitting Diode

For optical control systems

ø4.2

Unit : mm

+0.2
–0.1

Features

High-power output, high-efficiency : PO = 12 mW (typ.)
Light emitting spectrum suited for silicon photodetectors :

λ

= 900 nm (typ.)

P

Good optical power output linearity with respect to input current
Wide directivity : θ = 100 deg. (typ.)
Long lifetime, high reliability

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

170 mW
100 mA

2A
3V

–25 to +85 ˚C

–30 to +100 ˚C

2.4±0.3

1.2±0.1

12.7 min.

0.25±0.1

1.0±0.15

+0.2

–0.1

ø5.35

1.0±0.15

12

2-ø0.45±0.05

2.54±0.25

45±3˚

1: Cathode
2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 70 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Response time tr, t
Half-power angle θ The angle in which radiant intencity is 50% 100 deg.

IF = 100mA 7 12 mW

O

IF = 100mA 900 nm

P

IF = 100mA 1.4 1.7 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 50 pF

t

IF = 100mA 700 ns

f

1

Infrared Light Emitting Diodes LN172

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆P

— I

O

3

10

O

2

10

10

1

F

(1) tw = 10µs

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

2

0

Duty cycle (%)

V

— Ta

1.6

1.2

(V)

(1)

F

0.8

F

10

IF = 100mA

10mA

1mA

O

1

I

— V

FP

13524

F

t

= 10µs

w

f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 100mA

Relative radiant power ∆P

–1

10

–2

10

10

–2

–3

10

–1

11010

Forward current IF (A)

λ

— Ta

960

940

(nm)

P

920

900

880

P

IF = 100mA

Peak emission wavelength λ

860

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

820 860 900 940 980 1020

780

Wavelength λ (nm)

I

= 100mA

F

Ta = 25˚C

Relative radiant power ∆P

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚ 30˚

100

80
60

40
20

Relative radiant

intensity(%)

40˚

50˚

60˚
70˚

80˚
90˚
100˚
110˚

120˚

2