Panasonic LN151L, LN151F Datasheet
Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : PO = 7.5 mW (typ.)
Fast response and high-speed modulation capability :
t
, tf = 1 µs (typ.)
r
Infrared light emission close to monochromatic light :
λ
= 950 nm (typ.)
P
Narrow directivity, suitable for effective use of radiant power
(LN151L)
Wide directivity, matched for external optical systems (LN151F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
160 mW
100 mA
2A
3V
–25 to +100 ˚C
–30 to+100 ˚C
LN151F
LN151L
4.5±0.2
12.7 min.
1.0±0.15
6.3±0.3
12.7 min.
1.0±0.15
ø4.6±0.15
1.0±0.2
12
ø5.75 max.
ø4.6±0.15
1.0±0.2
12
Glass window
2-ø0.45±0.05
2.54±0.25
45±3˚
Glass lens
2-ø0.45 ± 0.05
2.54±0.25
45±3˚
Unit : mm
1: Anode
2: Cathode
Unit : mm
ø5.75 max.
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
C
Rise time t
Fall time t
Half-power angle
LN151F
LN151L 8 deg.
θ
IF = 100mA 5 7.5 mW
O
IF = 100mA 950 nm
P
IF = 100mA 1.3 1.6 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 60 pF
t
r
I
= 100mA
f
FP
The angle in which radiant intencity is 50%
1 µs
1 µs
32 deg.
1
Infrared Light Emitting Diodes LN151F, LN151L
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
V
— Ta
F
(V)
F
1.6
1.2
0.8
IF = 100mA
50mA
10mA
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
–1
10
11010
Duty cycle (%)
∆P
O
3
10
O
2
10
10
1
tw = 10µs
Ta = 25˚C
— I
FP
(1) t
= 10µs
w
Duty Cycle = 0.1%
(2) DC
Ta = 25˚C
(2)
I
— V
3
10
2
10
(mA)
FP
10
1
–1
10
Pulse forward current I
–2
10
2
0
FP
13524
F
t
= 10µs
w
f = 100Hz
Ta = 25˚C
Forward voltage VF (V)
∆P
— Ta
10
O
(1)
1
O
IF = 50mA
Forward voltage V
0.4
0
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
850 900 950 1000 1050 1100
800
Wavelength λ (nm)
I
= 100mA
F
Ta = 25˚C
Relative radiant power ∆P
–1
10
–2
10
110
2
10
Pulse forward current IFP (mA)
Directivity characteristics
LN151F
LN151L
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
2 0
Relative radiant power ∆P
4
30˚
40˚
50˚
60˚
Modulation output
70˚
80˚
90˚
10
10
10
3
10
10
Ta = 25˚C
Relative radiant intensity(%)
–1
– 40 0 40 80
Ambient temperature Ta (˚C )
Frequency characteristics
2
10
10
1
–1
–2
10
2
10
Frequency f (kHz)
3
10
Ta = 25˚C
4
10
2
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