GaAs MMIC
2.1
±0.1
1.25
±0.1
1
3
2
0.2
±0.05
0.12
+0.05
−0.02
0.2
±0.1
R0.2
0.425
0.425
2.0
±0.1
0 to 0.1
0.7
±0.1
0.9
±0.1
6
5
4
0.65
0.65
6 - 0° to 10°
0.2
0.1
GN02035B
GaAs IC (with built-in ferroelectric)
For mixer with built-in local amplifier of cellular phone
Other communication equipment
■ Features
•
Super miniature S-Mini 6-pin package (2 125 size)
•
Receiver mixer : Low distortion with local amplifier
■ Absolute Maximum Ratings Ta=25°C
Parameter Symbol Ratings Unit
RF section Input voltage V
Input current I
Max input power P
Lo input Input voltage V
section Input current I
Max input power P
Lo output Output voltage V
section Output current I
Mix·Lo Input voltage V
section Input current I
IF section Output voltage V
Output current I
Overall
Allowable power dissipation
Channel temperature
Storage temperature
OUT
OUT
OUT
OUT
P
T
T
IN
IN
IN
IN
IN
IN
IN
IN
D
ch
stg
−3V
1mA
10 dBm
−3V
1mA
10 dBm
5V
10 mA
−3V
1mA
5V
10 mA
100 mW
150 °C
−55 to +150
°C
Unit : mm
1 : RF in 4 : Lo out
2 : GND 5 : Mix·Lo in
3 : Lo in 6 : IF out
S Mini T ype Package (6-pin)
Marking Symbol : KD
■ Electrical Characteristics Ta=25°C±3°C
Parameter Symbol Conditions min typ max Unit
1
Mixer current
Local amplifier current
Conversion gain
Output third harmonics mutual OIP3 V
modulation distortion
Noise figure
Note) *1 : PRF=−27 dBm, PLo=−7 dBm
*
1
*
1
*
1
1, 2
*
*
*2 : Design-guaranteed items.
I
MIX
I
Lo
CG V
NF V
V
=3 V, fRF=850 MHz 4.3 mA
IFOUT
fLo=740 MHz
V
=3 V, fRF=850 MHz 3.2 mA
LoOUT
fLo=740 MHz
IFOUT=VLoOUT
=3 V 11 dB
fRF=850 MHz, fLo=740 MHz
IFOUT=VLoOUT
=3 V, fRF=850.1 MHz 7 .0 dBm
fLo=740.0 MHz, fIF=110.0 MHz or
110.1 MHz, f
IFOUT=VLoOUT
=109.9 MHz or 110.2 MHz
IM3
=3 V, fLo=740 MHz 6.2 dB
fIF=110 MHz
1