Panasonic GN01100B Datasheet
GaAs MMIC
2.1
±0.1
1.25
±0.1
1
3
2
0.2
±0.05
0.12
+0.05
−0.02
0.2
±0.1
R0.2
0.425
0.425
2.0
±0.1
0 to 0.1
0.7
±0.1
0.9
±0.1
6
5
4
0.65
0.65
6 - 0° to 10°
0.2
0.1
GN01100B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
■ Features
•
Super miniature S-Mini 6-pin package (2125 size)
•
Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
■ Absolute Maximum Ratings Ta=25 °C
Parameter Symbol Ratings Unit
Power supply voltage V
Circuit current I
Gate control voltage V
Max input power P
Allowable power dissipation
Operating ambient temperature
Storage temperature T
DD
DD
AGC
IN
P
D
T
opr
stg
5V
80 mA
0 to 3V
−5 dBm
150 mW
−30 to +90 °C
−40 to +120 °C
Unit: mm
1 :RF
IN
2 :V
DD1
3 :V
EIAJ : SC-88 S Mini Type Package (6-pin)
AGC
4 :V
5 : GND
6 :V
DD2
REF
Marking Symbol : HU
■ Electrical Characteristics V
DD1=VDD2
=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter Symbol Conditions min typ max Unit
1
Circuit current
Power gain 1
Power gain 2
*
1
*
1
*
I
DD
PG1 V
PG2 V
V
=2.0 V, PIN=−20 dBm 3 7 4 5 mA
AGC
=2.0 V, PIN=−20 dBm 2 0 2 3 dB
AGC
=0.5 V, PIN=−20 dBm −10 −5dB
AGC
Dynamic range DR PG1−PG2 30 34 dB
1, 2
Gain control sensitivity
Adjacent channel leakage ACP1 V
power (ACP) 1
Adjacent channel leakage ACP2 V
power (ACP) 1
Note) *1 : Refer to measurement circuit.
*2 : {PG(V
*3 : Design-guaranteed items.
*
*1, 3
*1, 3
=1.6V)[dB]−PG(V
AGC
GS Pin=−20 dBm 2 5 49 90 dB/V
=2.0 V, P
AGC
IS-95 modulation, 900 kHz
30 kHz
Bandwidth
=2.0 V, Pout=5 dBm −74 −6 5 dBc
AGC
IS-95 modulation, 1.98 MHz
=5 dBm −54 −50 dBc
OUT
Detuning
Detuning
30 kHz Bandwidth
=1.2V)[dB]/0.4[V]
AGC
1
GN01100B GaAs MMIC
■ Measurement Circuit
RF
V
10 nF
REF
V
DD2
33 pF
10 nF
39 nH
33 pF
5 Ω
Out
6
1
5
2
33 pF
IN
Ω
2 k
100 pF
Ω
240
10 nH
4
3
4.7 kΩ
V
AGC
2 pF
33 nF
10 nF
10 nF
V
DD1
2
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