Panasonic GN01096B Datasheet
GaAs MMIC
2.1
±0.1
1.25
±0.1
1
3
2
0.2
±0.05
0.12
+0.05
−0.02
0.2
±0.1
R0.2
0.425
0.425
2.0
±0.1
0 to 0.1
0.7
±0.1
0.9
±0.1
6
5
4
0.65
0.65
6 - 0° to 10°
0.2
0.1
GN01096B
GaAs IC (with built-in ferroelectric)
For low noise amplifier of cellular phone
Other communication equipment
■ Features
•
Super miniature S-Mini 6-pin package (2125 size)
•
Receiver amplifier : Low distortion with built-in gain control function
■ Absolute Maximum Ratings Ta=25 °C
Parameter Symbol Ratings Unit
Power supply voltage V
Circuit current I
Gate control voltage V
Max input power P
Allowable power dissipation
Operating ambient temperature
Storage temperature T
T
DD
AGC
P
DD
IN
D
opr
stg
8V
20 mA
0 to 4V
−5 dBm
150 mW
−30 to +90 °C
−40 to +120 °C
Unit: mm
1 : RF
IN
2 : GND 5 : GND
3 : V
EIAJ : SC-88 S Mini T ype Package (6-pin)
AGC
4 : V
DD
6 : Source
Marking Symbol : KW
■ Electrical Characteristics VDD=2.9 V, PIN=−25 dBm, Ta=25 °C±3 °C
Parameter Symbol Conditions min typ max Unit
Circuit current
Power gain 1
Power gain 2
Noise figure 1
Noise figure 2
Dynamic range
Input return loss
Output return loss
Third input intersept point
Third output intersept point
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
*1
*1
*1
*1, 2
I
DD
PG1 V
PG2 V
NF1 V
V
=1.5 V, f=850 MHz 6.5 10 mA
AGC
=1.5 V, f=850 MHz 12.5 15.0 17.5 dB
AGC
=0.1 V, f=850 MHz −10.0 −6.5 −3.0 dB
AGC
=1.5 V, f=832 MHz 1.4 2.0 dB
AGC
f=850 MHz, f=870 MHz
*1, 2
NF2 V
=0.1 V, f=832 MHz 17 22 dB
AGC
f=850 MHz, f=870 MHz
*1
*1, 2
*1, 2
*1, 2
*1, 2
DR V
S11 V
S22 V
IIP3 V
OIP3 V
=1.5 V to 0.1 V, f=850 MHz 18 22 27 dB
AGC
=1.5 V, f=850 MHz −10 −6dB
AGC
=1.5 V, f=850 MHz −10 −6dB
AGC
=1.5 V, f=850 MHz/850.9 MHz 4.0 5.8 dBm
AGC
=1.5 V, f=850 MHz/850.9 MHz 16.5 21.0 dBm
AGC
1
GN01096B GaAs MMIC
■ Measurement Circuit
1000 pF
100 pF
0.5 pF
82 Ω
1.4 pF
6
5
39 nH
22 nH
100 pF
4
RF
OUT
RF
1
33 pF
27 nH
IN
2
3
5.1 kΩ
12 pF
10 nF
V
AGC
2
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