GaAs MMIC
2.1
±0.1
1.25
±0.1
1
3
2
0.2
±0.05
0.12
+0.05
−0.02
0.2
±0.1
R0.2
0.425
0.425
2.0
±0.1
0 to 0.1
0.7
±0.1
0.9
±0.1
6
5
4
0.65
0.65
6 - 0° to 10°
0.2
0.1
GN01094B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
■ Features
•
Super miniature S-Mini 6-pin package (2125 size)
•
Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
■ Absolute Maximum Ratings Ta=25 °C
Parameter Symbol Ratings Unit
Power supply voltage V
Circuit current I
Gate control voltage V
Reference voltage V
Max input power P
Allowable power dissipation
Operating ambient temperature
Storage temperature T
T
DD
AGC
REF
P
DD
IN
D
opr
stg
8V
80 mA
0 to 3V
5V
−5 dBm
150 mW
−30 to +90 °C
−40 to +120 °C
Unit : mm
1 : V
DD2
2 : V
REF
3 : V
EIAJ : SC-88 S Mini T ype Package (6-pin)
DD1
4 : RF
5 : GND
6 : V
AGC
Marking Symbol : KV
IN
■ Electrical Characteristics V
DD1=VDD2=VREF
=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter Symbol Conditions min typ max Unit
1
Circuit current
Power gain 1
Power gain 2
*
1
*
1
*
I
DD
PG1 V
PG2 V
V
=2.0 V, PIN=−20 dBm 32 40 mA
AGC
=2.0 V, PIN=−20 dBm 27 31 dB
AGC
=0.5 V, PIN=−20 dBm −14 −8dB
AGC
Dynamic range DR PG1−PG2 35 45 dB
Adjacent channel leakage ACP PIN=−15 dBm, P
1, 2
power (ACP)
*
±900 kHz Detuning, 30 kHz Bandwidth
=5 dBm −54 −49 dBc
OUT
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
1