Panasonic GN01094B Datasheet

GaAs MMIC
2.1
±0.1
1.25
±0.1
1
3
2
0.2
±0.05
0.12
+0.05
0.02
0.2
±0.1
R0.2
0.425
0.425
2.0
±0.1
0 to 0.1
0.7
±0.1
0.9
±0.1
6
5
4
0.65
0.65
6 - 0° to 10°
0.2
0.1
GN01094B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone Other communication equipment
Features
Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
Absolute Maximum Ratings Ta=25 °C
Parameter Symbol Ratings Unit
Power supply voltage V Circuit current I Gate control voltage V Reference voltage V Max input power P Allowable power dissipation Operating ambient temperature Storage temperature T
T
DD
AGC
REF
P
DD
IN
D
opr
stg
8V
80 mA
0 to 3V
5V
5 dBm
150 mW
30 to +90 °C
40 to +120 °C
Unit : mm
1 : V
DD2
2 : V
REF
3 : V
EIAJ : SC-88 S Mini T ype Package (6-pin)
DD1
4 : RF 5 : GND 6 : V
AGC
Marking Symbol : KV
IN
Electrical Characteristics V
DD1=VDD2=VREF
=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter Symbol Conditions min typ max Unit
1
Circuit current Power gain 1 Power gain 2
*
1
*
1
*
I
DD
PG1 V PG2 V
V
=2.0 V, PIN=−20 dBm 32 40 mA
AGC
=2.0 V, PIN=−20 dBm 27 31 dB
AGC
=0.5 V, PIN=−20 dBm 14 8dB
AGC
Dynamic range DR PG1−PG2 35 45 dB Adjacent channel leakage ACP PIN=−15 dBm, P
1, 2
power (ACP)
*
±900 kHz Detuning, 30 kHz Bandwidth
=5 dBm 54 49 dBc
OUT
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
1
GN01094B GaAs MMIC
Measurement Circuit
18 nH
V
AGC
1000 pF
4.7 k
1000 pF
6
100 pF
15
RF
IN
5
4
Out
15 18 pF
47 nF
100 pF
1
2
3
120
33 nH
22 nH
1000 pF
V
REF
V
DD2
V
DD1
100 pF
1000 pF
2
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