GaAs MMICs
GN01081B
GaAs IC (with built-in ferroelectric)
Driver amplifier for PCS
■ Features
●High output amplifier
●Low distortion
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Power supply voltage
Circuit current
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
■ Electrical Characteristics (V
Parameter
Circuit current
Power gain
Adjacent channel
leakage power (ACP) 1
Adjacent channel
leakage power (ACP) 2
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
Symbol
I
DD
PG
ACP1
ACP2
Symbol
V
DD
I
DD
P
in
P
D
T
opr
T
stg
= 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C)
DD
Test method
(1)
(1)
(1)
(2)
(1)
(2)
Ratings
8
100
−5
450
−30 to +90
−40 to +120
Unit
V
mA
dBm
mW
°C
°C
Conditions
IS − 95 modulation, ±1.25MHz Detuning
30kHz Bandwidth
IS − 95 modulation, ±2.25MHz Detuning
30kHz Bandwidth
1
2
3
8-0.5±0.07
4
5
1.1±0.2
3.45±0.1
min
22
12
11
2.2±0.2
3.4±0.2
–0.05
+0.1
10-0.2
10
9
8
7
6
2-0.55±0.1
Detail of Part A & B
Part A
1: NC 7: V
2: V
3: Source2 9: IN1
4: IN2 10: NC
5: NC 11: GND
6: NC 12: GND
ESOF-10D Type Package
typ
60
25
−56
−71
2-12˚
Part B
12-0~0.2
DD2
max
75
27
−51
−66
2~12˚
2~12˚
unit: mm
2-12˚
2.8±0.2
8: NC
Unit
mA
dB
dBc
dBc
4.0±0.2
10-0.15±0.05
0.3±0.1
DD1
■ Measurement Circuit
5.6nH
2pF
IN
OUT
20Ω
100pF+47nF
5.6nH
109876
1122345
33pF
33nH
V
DD2
V
DD1
100pF
11
100pF+1000pF
150Ω
2pF
1.5nH
1.5nH
1pF
10Ω
1