Panasonic GN01010 Datasheet

Electrical Characteristics (Ta = 25˚C)
GaAs MMICs GN1010
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
Features
General-use wide-band amplifier
With bandwidth control pin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol
V
DS
V
GS
I
D
I
G
P
D
T
ch
T
stg
Rating
6
– 4
45
3 200 150
– 55 to +150
Unit
V
V mA mA
mW
˚C ˚C
Parameter
Drain current
Noise figure
Power gain
I
dB
compression output
Symbol
I
DD
* 1
NF
* 2
PG
* 2
P
O
* 2
Condition
V
DS
= 3V
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
Min
5
5
8
Typ
30
2
10
9
15
Max
45
3
Unit
mA
dB
dB
dBm
Unit : mm
* 1
IDD rank classification
1 : Source 2 : Drain 3 : C 4 : Gate
Mini Type Package (4-pin)
Rank
I
DD
(mA)
P
5 to 20
Q
15 to 30
R
25 to 45
* 2
NF, PG, PO test circuit
Equivalent Circuit
3
4
1
2
V
D
Cc
C = 1000 pF Cc = 200 pF Cf = 27 pF
Cc
C
f
C
C
G
S
2.8
+0.2 –0.3
1.5
+0.2 –0.30.65±0.15 0.65±0.15
0.5R 1
2
4
3
0.950.95
1.9±0.2
2.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
| S
11
|, | S22 | – f
GaAs MMICs GN1010
NF, PG – f
P
out, IM2, IM3
– P
in
PG, NF – f | S
21
|, | S12 | – f
0
2
4
6
8
10
12
0.1 0.3 1 3 10 Frequency f (GHz
)
Power gain PG
(
dB
)
Noise figure NF
(
dB
)
VDD=3V Ta=25˚C
PG
NF
–30
–20
–10
0
10
20
30
10 30 100 300 1000 3000 10000
Frequency f (MHz
)
Forward transfer gain, Reverse transfer gain
| S
21
| , | S
12
|
(
dB
)
VDD=3V Ta=25˚C
| S
21
|
| S
12
|
–40
–30
–20
–10
0
10
20
10 30 100 300 1000 3000 10000
Frequency f (MHz
)
Forward transfer gain, Reverse transfer gain
| S
11
| , | S
22
|
(
dB
)
| S
22
|
VDD=3V Ta=25˚C
| S
11
|
0.1 0.3 0.5 1.0 2.0
1
0
2
3
0
10
20
V
DD
=3V
Cf=27pF
PG
NF
Frequency f (GHz
)
Noise figure NF
(
dB
)
Power gain PG
(
dB
)
–40 –20 0 20
–80
–60
–40
0
20
40
–20
Pin (dBm
)
P
out
, IM
2
, IM
3
(
dBm
)
–90MHz –500MHz –1800MHz
VDD=3V Cf=27pF
I.P
P
out
IM
2
IM
3
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