Panasonic DN8899SE, DN8899S, DN8899 Datasheet

■ Overview

The DN8899/SE/TE/S is a combination of a Hall element,
amplifier, Schmidt circuit, and stabilized power supply/temper­ature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifi­er, converts into a digital signal through the Schmidt circuit,
and drives the TTL or MOS IC directly.

■ Features

•

High sensitivity and low drift

•

Stable temperature characteristics due to the additional tem­perature compensator

•

Wide operating supply voltage range(V

CC

=4.5 to 16V)

•

Operating in alternative magnetic field

•

TTL and MOS ICs directly drivable by output

•

Semipermanent service life due to no contact parts

•

Small change of the operating flux density against mechani­cal stress

•

Output open collector

•

“0” gauss point in the zero cross type hysteresis width

■ Applications

•

Speed sensors

•

Position sensors

•

Rotation sensors

•

Keyboard switches

•

Microswitches

Note) This IC is not suitable for the car electric equipment.

DN8899/SE/TE/S

Hall IC

(

Operating Temperature Range

Topr

=

–40 to+ 100˚C,

Operating in Alternative Magnetic Field

)

1

Hall Element

· DN8899/SE/TE

Amp. Schmitt Trigger Output Stage

3

2

V

CC

Output

GND

Stabilized Power Supply
Temperature Correction Circuit

■ Block Diagram

1

Hall Element

· DN8899S

Amp. Schmitt Trigger Output Stage

3

4

V

CC

Output

GND

2

NC
or
GND

Stabilized Power Supply
Temperature Correction Circuit

DN8899

DN8899SE

+0.1

0.43

– 0.05

1 : V
2 : GND
3 : Output

Unit : mm

CC

Unit : mm

4.5±0.3

0.5±0.1

1.27

123

5˚

2˚

5˚

2˚

4.52±0.3

2.0±0.3

1.0

0.7

4.0±0.3

5˚

0.8±0.1

10.5±0.5

SSIP003-P-0000A (E-3S)

DN8899S

0.55±0.15

0.4±0.1

123

SSIP003-P-0000C (SE-3S)

4.0±0.3

(1.0)(1.0)

0.6±0.15

1.27
123

SSIP003-P-0000B (TE-3S)

1

2

0.6±0.2

(1.0) (1.0)

4.52±0.3

12.5±06.5

(0.72)

2 to 5˚

R0.25

10.0±0.6

(0.4)

(0.7)

(0.6)

3.3±0.3

4

1.6

3

1.27

2˚

0.5±0.1 1.2±0.1

2˚

1.54±0.1

1 : V
2 : GND
3 : Output

1 : V
2 : GND
3 : Output

(0.2)

CC

Unit : mm

0.95±0.2

45˚

CC

Unit : mmDN8899TE

3.0±0.3

0.3 to 0.5

ESOP004-P-0200 (SOH-4D)

3.0±0.3

5.4±0.4

0.15

0.4±0.2

0 to 0.1

1 : V

CC

2 : NC or GND
3 : Output
4 : GND

1.5±0.3

V

CC

I

CC

I

O

P

D

T

opr

T

stg

Supply voltage
Supply current
Circuit current
Power dissipation
Operating ambient temperature
Storage temperature

V
mA
mA

mW

˚C
˚C

Parameter Symbol Rating Unit

■ Absolute Maximum Ratings (Ta=25˚C)

18

8

20

150
–40 to +100
–55 to +125

Parameter Symbol Condition min typ max Unit

■ Electrical Characteristics (Ta=25˚C)

Operating flux density

–12B

1 (L→H)

mT

V

CC

=12V

B

2 (H→L)

12 mT6

V

CC

=12V

Hysteresis width

7BW mT10

VCC=12V

Low output voltage

V

OL

0.4 V

Supply current

mA

V

CC

=16V

I

CC

5.5 mA

V

CC

=4.5V

–66– 0.1

0.1

High output current

I

OH

10 µA

V

CC

=4.5 to 16V, IO=12mA,

B=12mT
V

CC

=4.5 to 16V, VO=16V,

B=–12mT

1.5

1.5

1.0

1.3

1.0 1.75

1.0

1.0

Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.

· DN8899

1.0

1.25

1.0 1.63

· DN8899SE

1.0

1.15

1.0 1.5

· DN8899TE · DN8899S

DN8899

0.7

DN8899SE

0.42

DN8899TE

0.4

DN8899S

0.65

Distance from package
surface to sensor (mm)

■ Hall Element Position

Marking surface

Applied flux direction

Flux density (B)

Output voltage (V

O

)

B

1

B

2

■ Flux-Voltage Conversion Characteristics