Panasonic DN6847SE, DN6847S, DN6847 Datasheet

■ Overview

The DN6847/SE/TE/S is a combination of a Hall element,
amplifier, Schmitt circuit, and stabilized power supply/temper­ature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifi­er, converts into a digital signal through the Schmitt circuit,
and drives the TTL or MOS IC directly.

■ Features

•

High sensitivity and low drift

•

Stable temperature characteristics due to the additional tem­perature compensator

•

Wide operating supply voltage range (V

CC

=4.5 to 16V)

•

Operating in alternative magnetic field

•

TTL and MOS ICs directly drivable by output

•

Provided with the output pull-up resistors (typ 27kΩ)

■ Applications

•

Speed sensors

•

Position sensors

•

Rotation sensors

•

Keyboard switches

•

Microswitches

Note) This IC is not suitable for car electrical equipments.

DN6847/SE/TE/S

Hall IC (Operating Temperature Range
Topr = – 40 to +100˚C, Operating in
Alternative Magnetic Field)

1

Hall element

· DN6847/SE/TE

Amp. Schmitt trigger Output stage

3

2

V

CC

Output

GND

27kΩ

Stabilized power supply
temperature correction circuit

■ Block Diagram

1

Hall element

· DN6847S

Amp. Schmitt trigger Output stage

3

4

V

CC

Output

GND

27kΩ

2

NC
or
GND

Stabilized power supply
temperature correction circuit

DN6847

5˚

2˚

DN6847SE

4.5±0.3

123

4.52±0.3

4.0±0.3

5˚

0.8±0.1

10.5±0.5

0.5±0.1

1.27

5˚

2˚

SSIP003-P-0000A (E-3S)

1.0

0.7

2.0±0.3

+0.1

0.43

– 0.05

1 : V
2 : GND
3 : Output

Unit : mm

CC

Unit : mm

0.55±0.15

0.4±0.1

SSIP003-P-0000C (SE-3S)

DN6847TE

(1.0)(1.0)

0.6±0.15

SSIP003-P-0000B (TE-3S)

DN6847S

1

2

0.6±0.2

(1.0)(1.0)

1.27
2 to 5˚

123

2˚

R0.25

4.0±0.3

10.0±0.6

0.5±0.1 1.2±0.1

1.27
123

12.5±06.5

2˚

4.52±0.3

(0.72)

(0.4)

1.54±0.1

(0.7)

(0.6)

3.3±0.3

4

1.6

3

1 : V

CC

2 : GND
3 : Output

(0.2)

1 : V

CC

2 : GND
3 : Output

0.95±0.2

45˚

Unit : mm

Unit : mm

3.0±0.3

0.3 to 0.5

ESOP004-P-0200 (SOH-4D)

3.0±0.3

5.4±0.4

0.15

0.4±0.2

0 to 0.1

1 : V

CC

2 : NC or GND
3 : Output
4 : GND

1.5±0.3

V

CC

I

CC

I

O

P

D

T

opr

T

stg

Supply voltage
Supply current
Circuit current
Power dissipation
Operating ambient temperature
Storage temperature

V
mA
mA

mW

˚C
˚C

Parameter Symbol Rating Unit

■ Absolute Maximum Ratings (Ta=25˚C)

18

8

20

150
–40 to +100
–55 to +125

Parameter Symbol Condition min typ max Unit

■ Electrical Characteristics (Ta=25˚C)

Operating flux density

–17.5B

1 (L to H)

mT–6

V

CC

=12V

B

2 (H to L)

17.5 mT6

V

CC

=12V

Hysteresis width

7BW mT10

VCC=12V

Output voltage

V

OL

0.4 V

V

CC

=16V, VO=0V,

B= –17.5mT

14.7

V

OH

V

2.9 V

Output short-circuit current

0.4

– I

OS

0.9 mA

Supply current

1 mA

V

CC

=16V

1

I

CC

5.5 mA

V

CC

=4.5V

6

VCC=4.5V, IO=–30µA,
B= –17.5mT

V

CC

=16V, IO= –30µA,

B= –17.5mT

V

CC

=4.5 to 16V, IO=12mA,

B=17.5mT

1.5

1.5

1.0

1.3

1.0 1.75

1.0

1.0

Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.

· DN6847

1.0

1.25

1.0 1.63

· DN6847SE

1.0

1.15

1.0 1.5

· DN6847TE · DN6847S

Distance from package
surface to sensor

DN6847

0.7

DN6847SE

0.42

DN6847TE

0.4

DN6847S

0.65

■ Hall Element Position

Marking surface

Applied flux direction

Flux density (B)

OUtput voltage (V

O

)

B

1

B

2

■ Flux-Voltage Conversion Characteristics