Panasonic CNZ1120 Datasheet

Transmissive Photosensors (Photo Interrupters)

CNZ1120

Photo Interrupter

For contactless SW, object detection

Overview

CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.

Features

Wide gap between emitting and detecting elements, suitable for

thick plate detection Gap : 10mm

Fast response : tr, tf = 6 µs (typ.)

The external case is molded using visible light cutoff resin. The

case has no openings, so the photosensor is not easily susceptible

to output attenuation resulting from dust or particles

Absolute Maximum Ratings (Ta = 25˚C)

Input (Light
emitting diode)

Output (Photo
transistor)

Temperature

Parameter

Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature T

Symbol

R

F

*1

D

C

V

CEO

V

ECO

*2

P

C

T

opr

stg

Ratings Unit

3V
50 mA
75 mW
20 mA
20 V

5V

100 mW
–5 to +60 ˚C
–15 to +65 ˚C

19.0±0.35

10.0±0.3
A

2-C0.5

3.0±0.2

14.0±0.23.0 min.

A'

(15.5) (2.54)

23

14

(Note) ( ) Dimension is reference

*1

Input power derating ratio is

2-0.45

1.0 mW/˚C at Ta ≥ 25˚C.

*2

Output power derating ratio is

1.33 mW/˚C at Ta ≥ 25˚C.

Unit : mm

6.2±0.25

(2.0)

SEC. A-A'

23

14

Pin connection

Electrical Characteristics (Ta = 25˚C)

Parameter

Input
characteristics

Output
characteristics

Transfer
characteristics

*1

ID : Leakage current due to scattered light

*2

Switching time measurement circuit

50Ω R

Forward voltage (DC) VFIF = 50mA 1.2 1.5 V
Reverse current (DC) IRVR = 3V 10 µA
Collector cutoff current I
Collector to emitter capacitance
Collector current ICV
Response time tr , t
Collector to emitter saturation voltage

Sig.IN

V

CC

Sig.OUT 10%

L

(Input pulse)

(Output pulse)

Symbol

CEOVCE

CCV

*2

f

V

CE(sat)IF

t

d

Conditions min typ max Unit

= 10V, IF = 0mA, ID = 0mA

= 10V, f = 1MHz 5 pF

CE

= 10V, IF = 20mA, RL = 100Ω

CE

V

= 10V, IC = 1mA, RL = 100Ω

CC

*1

1.0 mA

6 µs

200 nA

= 50mA, IC = 0.1mA 0.4 V

td : Delay time

: Rise time (Time required for the collector current to increase

t

90%

r

from 10% to 90% of its final value)

: Fall time (Time required for the collector current to decrease

t

t

r

t

f

f

from 90% to 10% of its initial value)

1