Panasonic CNZ1110 Datasheet
1
Transmissive Photosensors (Photo Interrupters)
Pin connection
Unit : mm
Mark for indicating
LED side
ø1.2
0.5
8.8±0.2
8.0 min.
1.6
1.8±0.2 2.0±0.2
3.0±0.3
1.6
4.0
6.0±0.2
Device
center
0.4±0.1
13.8±0.3
2.8±0.2
2.0
3.0
0.8
*10.0±0.4 *2.54
0.5 0.7
A
A'
SEC. A-A'
23
14
23
14
(Note) * is dimension at the root of leads
(Input pulse)
(Output pulse)
50Ω R
L
td : Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
ON1110
Photo Interrupter
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Small package used for saving mounting space
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC) V
R
3V
emitting diode)
Forward current (DC) I
F
50 mA
Power dissipation P
D
*1
75 mW
Collector current I
C
20 mA
Output (Photo
Collector to emitter voltage
V
CEO
30 V
transistor)
Emitter to collector voltage
V
ECO
5V
Collector power dissipation
P
C
*2
100 mW
Temperature
Operating ambient temperature
T
opr
–25 to +85 ˚C
Storage temperature T
stg
–30 to +100
˚C
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC) VFIF = 50mA 1.2 1.5 V
Reverse current (DC) IRVR = 3V 10 µA
characteristics
Capacitance between terminals
CtVR = 0V, f = 1MHz 50 pF
Output
Collector cutoff current I
CEOVCE
= 10V 200 nA
characteristics
Collector to emitter capacitance
CCV
CE
= 10V, f = 1MHz 5 pF
Transfer
Collector current I
C
*2
V
CE
= 10V, IF = 20mA 0.3 mA
characteristics
Response time tr , t
f
*1
V
CC
= 10V, IC = 1mA, RL = 100Ω
6 µs
Collector to emitter saturation voltage
V
CE(sat)IF
= 50mA, IC = 0.1mA 0.3 V
*
Switching time measurement circuit
Outline
ON1110 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
*2
IC classifications
Class Q R S
IC (mA) 0.3 to 0.85 0.75 to 2.15 > 1.85
2
Transmissive Photosensors (Photo Interrupters) ON1110
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0
– 25
I
F
— V
F
60
30
20
10
50
40
Forward voltage VF (V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
0
0
Ta = 25˚C
I
C
— I
F
10
2
10
1
10
–1
Forward current IF (mA)
Collector current I
C
(mA)
10 10
2
10
3
10
–2
1
V
CE
= 10V
Ta = 25˚C
V
F
— Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0
– 40 – 20 0 20406080100– 40 – 20
0 20406080100– 40 – 20
I
C
— V
CE
10
2
10
1
10
–1
Collector to emitter voltage VCE (V)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
Ta = 25˚C
Ambient temperature Ta (˚C )
Relative output current I
C
(%)
I
C
— Ta
160
120
80
40
VCE = 10V
I
F
= 20mA
I
CEO
— Ta
10
10
–2
1
10
–3
10
–1
Ambient temperature Ta (˚C )
Dark current I
CEO
(µA)
10
–4
11010
–1
t
r
— I
C
10
1
Collector current IC (mA)
Rise time t
r
(µs)
10
–1
10
–2
10
3
10
2
VCC = 10V
Ta = 25˚C
I
C
— d
100
60
40
20
80
Distance d (mm)
Relative output current I
C
(%)
12 6543
0
0
V
CE
= 10V
Ta = 25˚C
I
F
= 20mA
IF , I
C
— Ta
Forward current, collector current I
F
, I
C
(mA)
IF = 30mA
20mA
10mA
d
10%
90%
t
d
trt
f
R
L
V
CC
V
1
V
2
V
1
V
2
Sig.
OUT
50Ω
Sig.IN
VCE = 24V
10V
100Ω
RL = 1kΩ
500Ω
10mA
IF = 50mA
I
F
I
C
Criterion
0
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