(Input pulse)
(Output pulse)
50Ω R
L
td : Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
ON1109
Photo Interrupter
For contactless SW, object detection
Outline
ON1109 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Highly precise position detection : 0.7 mm
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Deep and wide gap between emitting and detecting elements
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC) V
R
3V
emitting diode)
Forward current (DC) I
F
50 mA
Power dissipation P
D
*1
75 mW
Collector current I
C
20 mA
Output (Photo
Collector to emitter voltage
V
CEO
30 V
transistor)
Emitter to collector voltage
V
ECO
5V
Collector power dissipation
P
C
*2
100 mW
Temperature
Operating ambient temperature
T
opr
–25 to +85 ˚C
Storage temperature T
stg
–30 to +100
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC) VFIF = 50mA 1.2 1.5 V
characteristics
Reverse current (DC) IRVR = 3V 10 µA
Output
Collector cutoff current I
CEOVCE
= 10V 200 nA
characteristics
Collector to emitter capacitance
CCV
CE
= 10V, f = 1MHz 5 pF
Transfer
Collector current ICV
CE
= 10V, IF = 20mA 0.3 mA
characteristics
Response time tr , t
f
*
V
CC
= 10V, IC = 1mA, RL = 100Ω
6 µs
Collector to emitter saturation voltage
V
CE(sat)IF
= 50mA, IC = 0.1mA 0.3 V
*
Switching time measurement circuit
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta ≥ 25˚C.