Panasonic CNZ1109 Datasheet

1
Transmissive Photosensors (Photo Interrupters)
2.0±0.2
Pin connection
Unit : mmUnit : mm
LED side ø1.5
17.0±0.3
22.4±0.2
28.0±0.35
5.0±0.2
(12.0)
(2.54)
2-0.45±0.2
3.0±0.2
13.0±0.2
4.0 min.
7.0±0.2
2
3
14
Device
center
3.0±0.3
1.0±0.2
2-ø3.2±0.2
2-C2.0±0.3
A
A'
SEC. A-A'
23
14
(Note) ( ) Dimension is reference
(Input pulse)
(Output pulse)
50 R
L
td : Delay time t
r
: Rise time (Time required for the collector current to increase from 10% to 90% of its final value) t
f
: Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT 10%
90%
Sig.IN
t
d
t
r
t
f
ON1109
Photo Interrupter
For contactless SW, object detection
Outline
ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.7 mm
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Deep and wide gap between emitting and detecting elements
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC) V
R
3V
emitting diode)
Forward current (DC) I
F
50 mA
Power dissipation P
D
*1
75 mW
Collector current I
C
20 mA
Output (Photo
Collector to emitter voltage
V
CEO
30 V
transistor)
Emitter to collector voltage
V
ECO
5V
Collector power dissipation
P
C
*2
100 mW
Temperature
Operating ambient temperature
T
opr
–25 to +85 ˚C
Storage temperature T
stg
–30 to +100
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC) VFIF = 50mA 1.2 1.5 V
characteristics
Reverse current (DC) IRVR = 3V 10 µA
Output
Collector cutoff current I
CEOVCE
= 10V 200 nA
characteristics
Collector to emitter capacitance
CCV
CE
= 10V, f = 1MHz 5 pF
Transfer
Collector current ICV
CE
= 10V, IF = 20mA 0.3 mA
characteristics
Response time tr , t
f
*
V
CC
= 10V, IC = 1mA, RL = 100
6 µs
Collector to emitter saturation voltage
V
CE(sat)IF
= 50mA, IC = 0.1mA 0.3 V
*
Switching time measurement circuit
*1
Input power derating ratio is
1.0 mW/˚C at Ta 25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta 25˚C.
2
Transmissive Photosensors (Photo Interrupters) ON1109
IF , I
C
— Ta
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0 – 25
I
F
— V
F
60
30
20
10
50
40
Forward voltage VF (V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
0
0
Ta = 25˚C
I
C
— I
F
10
2
10
1
10
–1
Forward current IF (mA)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
VCE = 10V Ta = 25˚C
V
F
— Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0 – 40 – 20
Ambient temperature Ta (˚C )
0 20406080100– 40 – 20
0 20406080100– 40 – 20
I
C
— V
CE
10
2
10
1
10
–1
Collector to emitter voltage VCE (V)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
Ta = 25˚C
Relative output current I
C
(%)
I
C
— Ta
160
120
80
40
0
V
CE
= 10V
I
F
= 20mA
I
CEO
— Ta
10
10
–2
1
10
–3
10
–1
Ambient temperature Ta (˚C )
Dark current I
CEO
(µA)
10
–4
11010
–1
t
r
— I
C
10
1
Collector current IC (mA)
Rise time t
r
(µs)
10
–1
10
–2
10
3
10
2
VCC = 10V Ta = 25˚C
I
C
— d
100
60
40
20
80
Distance d (mm)
Relative output current I
C
(%)
12 6543
0
0
V
CE
= 10V Ta = 25˚C I
F
= 20mA
Forward current, collector current I
F
, I
C
(mA)
I
F
I
C
10mA
IF = 50mA
IF = 30mA
20mA 10mA
VCE = 24V 10V
RL = 1k
500
100
d
10%
90%
t
d
trt
f
R
L
V
CC
V
1
V
2
V
1
V
2
Sig. OUT
50
Sig.IN
Criterion
0
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