Panasonic CNZ1108, CNZ1102 Datasheet

Transmissive Photosensors (Photo Interrupters)

CNZ1102,CNZ1108

Photo Interrupters

For contactless SW, object detection

Overview

CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.

Features

Position detection accuracy : 1.2 mm

Large output current

Fast response : tr, tf = 4 µs (typ.) (CNZ1102)

6 µs (typ.) (CNZ1108)

Small output current variation against change in temperature

Small package used for saving mounting space (CNZ1108)

CNZ1102

Mark for
indicating
LED side

Device

center

10.0±0.2

2.5±0.2

7.0 min.

2-ø3.2±0.2

6.2±0.2

*2.54±0.2

(Note) * is dimension at the root of leads

25.0±0.35

13.0±0.3

3.0±0.2

*9.6±0.3

19.0±0.2

23

14

23

14

Unit : mm

3.0±0.3

2-0.45±0.2

Pin connection

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Input (Light
emitting diode)

Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I

Output (Photo
transistor)

Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation

Temperature

*1

Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.

*2

Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.

Operating ambient temperature
Storage temperature T

Symbol

R

F

*1

D

C

V

CEO

V

ECO

*2

P

C

T

opr
stg

Ratings Unit

3V
50 mA
75 mW
20 mA
30 V

5V

100 mW
–25 to +85 ˚C
–30 to +100

˚C

CNZ1108

Mark for indicating

LED side

13.0±0.3

3.0±0.2

A

10.0±0.2

A'

2.5±0.2

7.0 min.6.2±0.2

*9.4±0.3 *2.54±0.2

23

14

(Note) * is dimension at the root of leads

3.5±0.2

Device
center

4- 0.45±0.2

23

14

Unit : mm

3.0±0.3

SEC. A-A'

Pin connection

1

CNZ1102,CNZ1108 Transmissive Photosensors (Photo Interrupters)

Electrical Characteristics (Ta = 25˚C)

Parameter

Forward voltage (DC) VFIF = 50mA 1.2 1.5 V

Input
characteristics

Reverse current (DC) IRVR = 3V 10 µA
Capacitance between terminals

Output

characteristics

Collector cutoff current I
Collector to emitter capacitance
Collector current I

Transfer
characteristics

Response time

Collector to emitter
Saturation voltage

*1

Switching time measurement circuit

CNZ1102
CNZ1108
CNZ1102 V
CNZ1108 V

Symbol

Conditions min typ max Unit

CtVR = 0V, f = 1MHz 50 pF

CEOVCE

CCV

*2

C

tr , t

f

CE(sat)IF

CE(sat)IF

= 10V 200 nA
= 10V, f = 1MHz 5 pF

CE

V

= 10V, IF = 20mA 2 mA

CE

V

= 10V, IC = 5mA, RL = 100Ω

CC

*1

V

= 10V, IC = 1mA, RL = 100Ω

CC

4 µs
6 µs

= 50mA, IC = 1mA 0.4 V
= 50mA, IC = 0.1mA 0.4 V

Sig.IN

50Ω R

*2

IC classifications

V

CC

Sig.OUT 10%

L

(Input pulse)

(Output pulse)

t

d

t

r

Class Q R S

IC (mA) 2.0 to 5.0 4.0 to 10.0 7.0 to 20.0

IF , I

— Ta

60

(mA)

C

50

, I

F

40

C

60

I

F

50

40

(mA)

F

I

t

f

F

td : Delay time

: Rise time (Time required for the collector current to increase

t

90%

r

from 10% to 90% of its final value)

: Fall time (Time required for the collector current to decrease

t

f

from 90% to 10% of its initial value)

— V

F

Ta = 25˚C

10

10

(mA)

C

I

— I

C

2

F

VCE = 10V
Ta = 25˚C

30

I

20

10

Forward current, collector current I

C

0

0 20406080100

– 25

Ambient temperature Ta (˚C )

2

30

20

Forward current I

10

0

0.4 0.8 1.2 1.6 2.42.0

0

Forward voltage VF (V)

1

–1

10

Collector current I

–2

10

–1

10

Forward current IF (mA)

11010

2