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Transmissive Photosensors (Photo lnterrupters)
CNZ1021 (ON1021), CNZ1023 (ON1023),
CNA1009H (ON1024)
Photo lnterrupter
For contactless SW, object detection
■ Overview
CNZ1021, CNZ1023 and CNA1009H are a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to face each other, and objects passing be-
tween them are detected.
■ Features
• Highly precise position detection: 0.25 mm
• Gap width: 3 mm (CNZ1021, CNZ1023)
5 mm (CNA1009H)
• The type directly attached to PCB ....... CNZ1021
Screw-fastened type (one side) ............ CNZ1023
The type directly attached to PCB ....... CNA1009H
(with a positioning pins)
CNZ1023 Unit: mmCNZ1021 Unit: mm
Σ
12.0
3.0±0.15
A
(2.5)
10.0
A'
2.5
10.0 min.
(2-0.45) (2-0.45)
(7.6) (2.54)
23
0.4±0.1
Device
center
5.0
(C1.2)
2.1±0.15
SEC. A-A'
1: Anode
2: Cathode
14
3: Collector
4: Emitter
PISTR104-001 Package
CNA1009H Unit: mm
Σ
(2.5)2.5
10.0
10.0 min.
±0.1
5.2
14.0
5.0
±0.15
A
A'
2-0.7
(10.0)
23
(2-0.45)
Device
center
6.0
5.0
0.5
±0.1
SEC. A-A'
(C1)
2.2±0.15
2-φ0.7
(2-0.45)
(2.54)
±0.1
1: Anode
2: Cathode
14
2.35
±0.1
6.6
±0.1
3: Collector
4: Emitter
PISTR104-004 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Note) The part numbers in the parenthesis show conventional part number.
Σ
2.0
12.0
3.0
±0.15
A
(2.5)
10.0
A'
2.5
10.0 min.
(2-0.45)
(7.6) (2.54)
23
14
Device
center
0.4
(4-R2)
+0.15
φ3.0
-
0
18.0
12.0±0.15
5.0
±0.1
2.1±0.15
SEC. A-A'
PISTR104-003 Package
3.5
(2-0.45)
(C1.2)
2-R1.5
0.5
6.0
0
+0.15
-
3.0
1: Anode
2: Cathode
3: Collector
4: Emitter
Publication date: April 2004 SHG00017BED
1
CNZ1021, CNZ1023, CNA1009H
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Input (Light Reverse
emitting diode) voltage
CNZ1021 V
R
CNZ1023 3
CNA1009H 5
Forward current I
1
Power dissipation
*
Output (Photo Collector-emitter voltage V
P
CEO
F
D
transistor) (Base open)
Emitter-collector voltage V
ECO
(Base open)
Temperature
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
C
2
*
P
C
T
opr
stg
Note)*1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.
*
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Input
characteristics
Output
characteristics
Transfer
characteristics
Note) 1. Input and output are practiced by electricity.
Forward voltage VFIF = 20 mA 1.25 1.40 V
Reverse current I
Collector-emitter cutoff current
R
I
CEO
(Base open)
Collector current I
Collector-emitter saturation voltage
Rise time
Fall time
*
*
C
V
CE(sat)IF
t
r
t
f
2. This device is designed be disregarded radiation.
3.*: Switching time measurement circuit
Sig. in
50 Ω R
V
CC
L
Sig. out
(Input pulse)
(Output pulse)
3V
50 mA
75 mW
30 V
5V
20 mA
100 mW
−25 to +85 °C
−40 to +100 °C
VR = 3 V 10 µA
VCE = 10 V 10 200 nA
VCC = 5 V, IF = 20 mA, RL = 100 Ω 0.5 15.0 mA
= 40 mA, IC = 1 mA 0.4 V
VCC = 5 V, IC = 1 mA 5 µs
RL = 100 Ω 5 µs
t
r
t
: Rise time
r
: Fall time
t
90%
f
10%
t
f
2
SHG00017BED
CNZ1021, CNZ1023, CNA1009H
IF , IC T
60
I
(mA)
50
C
40
30
, collector current I
F
20
10
Forward current I
10
10
(mA)
C
F
I
C
0
−25
0 20406080100
Ambient temperature Ta (°C )
2
1
IC I
F
a
VCE = 5 V
= 25°C
T
a
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 1.2 1.6 2.0 2.40.80
Forward voltage VF (V)
2
10
10
(mA)
C
1
IF V
IC V
F
CE
Ta = 25°C
Ta = 25°C
IF = 30 mA
20 mA
10 mA
VF T
1.6
1.2
(V)
F
V
0.8
Forward voltage
0.4
0
−40 0 40 80
Ambient temperature Ta (°C )
∆IC T
160
(%)
120
C
80
a
a
IF = 50 mA
10 mA
1 mA
VCE = 5 V
= 20 mA
I
F
−1
10
Collector current I
−2
10
−1
10
11010210
Forward current IF (mA)
I
T
3
10
(µA)
CEO
2
10
CEO
a
= 10 V
V
CE
10
1
−1
10
Collector-emitter cutoff current (Base open) I
−2
10
−40
04080
Ambient temperature Ta (°C )
−1
10
Collector current I
−2
10
−1
11010
Collector-emitter voltage VCE (V)
tr I
2
10
10
(µs)
r
1
Rise time t
−1
10
−2
10
−1
10
110
Collector current IC (mA)
C
RL = 1 kΩ
500 Ω
100 Ω
V
CC
T
a
= 5 V
= 25°C
40
Relative collector current ∆I
0
2
−40 0 40 80
Ambient temperature Ta (°C )
∆IC d
100
80
(%)
C
60
40
20
Relative collector current ∆I
0
2
10
0
1234 65
Distance d (mm)
= 5 V
V
CE
= 25°C
T
a
= 20 mA
I
F
Criterion
0
d
SHG00017BED
3
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
2003 SEP
2003 SEP
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