Datasheet CNY21N Datasheet (TEMIC)

Optocoupler with Phototransistor Output

Description

The CNY21N consists of a phototransistor optically
coupled to a gallium arsenide infrared emitting diode in
a 4-lead plastic dual inline package.

The single components are mounted on one leadframe in
the opposite position, providing a fixed distance between
input and output for highest safety requirements of
> 3 mm.

Application

Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):

D

For application class I - IV at mains voltage ≤ 300 V

D

For application class I - IV at mains voltage ≤ 600 V

CNY21N

95 10533

D

For application class I - III at mains voltage ≤ 1000 V
according, to VDE 0884, table 2, suitable for:

Switch-mode power supplies, computer peripheral
interface, microprocessor system interface, line
receiver.

These couplers perform safety functions according to the following equipment standards:

D

VDE 0884

Optocoupler providing protective separation

D

VDE 0804

Telecommunication apparatus and data processing

D

VDE 0805/IEC 950/EN 60950

Office machines (applied for reinforced isolation for
mains voltage ≤ 400 V

D

VDE 0860/lEC 65

Safety for mains operated electronic and related
household apparatus

D

VDE 0700/IEC 335

Household equipment

D

VDE 0160

Electronic equipment for electrical power installation

D

VDE 0750/IEC 601

Medical equipment

RMS

)

Pin Connection

A (+)

C (–)

C

95 10850

E

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

1 (10)

CNY21N

Features

According to VDE 0884

D

Rated impulse voltage (transient overvoltage)

= 8 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test voltage)

= 2.8 kV peak

V

pd

D

Rated isolation voltage (RMS includes DC)

IOWM

IORM

= 1000 V

= 1000 V

V

D

Rated recurring peak voltage (repetitive)
V

D

Creeping current resistance according to
VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

Absolute Maximum Ratings

(1450 V peak)

RMS

RMS

D

Thickness through insulation > 3 mm

D

Isolation materials according to UL 94

D

Pollution degree 2 (DIN/VDE 0110)

D

Climatic classification 55/085/21 (IEC 68 part 1)

D

Further approvals: BS 415, BS 7002, SETI: IEC 950,
UL 1577: File no: E 76222

D

Special construction: therefore extra low coupling
capacity of typical 0.3 pF, high Common Mode
Rejection

D

Low temperature coefficient of CTR

D

Current Transfer Ratio (CTR) of typical 60%

Input (Emitter)

Parameters Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T

≤ 25°C P

amb

Junction temperature T

Output (Detector)

Parameters Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T

≤ 25°C P

amb

Junction temperature T

Coupler

Parameters Test Conditions Symbol Value Unit
AC isolation test voltage (RMS) V
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case t ≤ 10 s T

≤ 25°C P

amb

R

F

FSM

tot

CEO
ECO

C

CM

tot

IO

tot

amb

stg
sd

5 V

50 mA

1.5 A

120 mW

j

100 °C

32 V

5 V

50 mA
100 mA
130 mW

j

100 °C

8.2 kV

250 mW

–55 to +85 °C

–55 to +100 °C

260 °C

2 (10)

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

1)

Maximum Safety Ratings

(according to VDE 0884)

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

≤ 25°C P

amb

Coupler

Parameters Test Conditions Symbol Value Unit
Rated impulse voltage V
Safety temperature T

si

si

IOTM

si

CNY21N

120 mA

250 mW

8 kV

180 °C

1)

This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.

Derating Diagram

250
225
200
175
150
125

mA ( mA )

100

75

Isi (mA)

50
25

0

0 25 50 75 100 125 150 175 200

Psi (mW)

T

( °C )95 10888

amb

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

3 (10)

CNY21N

Electrical Characteristics

T

= 25°C

amb

Input (Emitter)

Parameters Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Breakdown voltage IR = 100 mA V
Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameters Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter

breakdown voltage
Emitter collector

breakdown voltage
Collector emitter

cut-off current

Coupler

Parameters Test Conditions Symbol Min. Typ. Max. Unit
AC isolation test voltage

(RMS)
Collector emitter

saturation voltage
Cut-off frequency VCE = 5 V, IF = 5 mA,

Coupling capacitance f = 1 MHz C
IC/I

F

IC = 1 mA V

IE = 100 mA V

(BR)CEO

(BR)ECO

VCE = 20 V, If = 0 I

f = 50 Hz, t = 1 s V

IF = 10 mA, IC = 1 mA V

= 100

R

L

W

IF = 10 mA, VCE = 5 V CTR 0.25 0.6

F

(BR)

j

CEO

IO

CEsat

f

c

k

1.25 1.6 V

5 V

50 pF

32 V

5 V

200 nA

8.2 kV

0.3 V

170 kHZ

0.3 pF

4 (10)

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

CNY21N

yp

Switching Characteristics (Typical Values)

VS = 5 V

Type

td[ms] tr[ms] ton[ms] ts[ms] tf[ms] t

CNY21N 2.6 2.4 5.0 0.3 2.7 3.0 5 11 13.5 20

RL = 100 W (see figure 1) RL = 1 kW (see figure 2)

[ms] IC[mA] ton[ms] t

off

[ms] IF[mA]

off

0

RG= 50

t

p

= 0.01

T

= 50 ms

t

p

95 10900

I

F

IF

W

+ 5 V

IC = 5 mA;

Adjusted through

input amplitude

Channel I

Oscilloscope

Channel II

50

W

Figure 1. Test circuit, non-saturated operation

100

W

R

w

1 M

v

W

20 pF

L

C

L

0

RG= 50

t

p

T

t

95 10901

= 0.01
= 50 ms

p

W

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

I

F

IF = 20 mA

50

W

Figure 2. Test circuit, saturated operation

1 k

W

+ 5 V

I

C

Channel I

Channel II

Oscilloscope

R

w

1 M

L

C

v

20 pF

L

W

5 (10)

CNY21N

Partial disch

(

t)

t

I

Insulation Rated Parameters (according to VDE 0884)

Parameters Test Conditions Symbol Min. Typ. Max. Unit
arge

test voltage

nsulation resistance

V

V

Routine test 100%, t

Lot test

sample tes

IOTM

tTr = 10 s,

(see figure 3)

VIO = 500 V R

VIO = 500 V,

T

amb

VIO = 500 V,
T

amb

(construction test only)

test

= 60 s

test

= 100°C

= 180°C

= 1 s V

V

, t2 = 1 to 10 s

t

1

t

, t4 = 1 s

3

pd

IOTM

V

pd

IO

R

IO

R

IO

2.8 kV
8 kV

2.2 kV

12

10

11

10

9

10

W
W

W

V

IOWM

V

V

pd

IORM

94 9225

0

t

= 60 s

t

3

t

1

Figure 3. Test pulse diagram for sample test according to DIN VDE 0884

t

Tr

t

2

=10 s

test

t

stress

= 62 s

t

4

t

6 (10)

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

CNY21N

Typical Characteristics (T

200

160

120

Coupled Device

80

Phototransistor
IR-Diode

40

tot

P – Total Power Dissipation ( mW )

0

025 5075

T

95 11003

– Ambient Temperature ( °C )

amb

= 25°C, unless otherwise specified)

amb

100

Figure 4. Total Power Dissipation vs. Ambient Temperature

1000.0

100.0

10000

VCE=20V
I

=0

1000

100

with open Base ( nA )

CEO

I – Collector Dark Current,

95 11005

F

10

1

0255075

T

– Ambient Temperature ( °C )

amb

100

Figure 7. Collector Dark Current vs. Ambient Temperature

100

VCE=5V

10

10.0

1.0

F

I – Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 5. Forward Current vs. Forward Voltage

1.5

VCE=5V

1.4

I

=10mA

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

rel

0.6

CTR – Relative Current Transfer Ratio

0.5

–30 –20 –10 0 10 20 30 40 50 60 70 80

T

– Ambient Temperature ( °C )96 11909

amb

1

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11006

IF – Forward Current ( mA )

Figure 8. Collector Current vs. Forward Current

C

I – Collector Current ( mA )

95 11007

100

10

1

0.1

0.1 1 10
V

– Collector Emitter Voltage ( V )

CE

IF=50mA

20mA

2mA

100

10mA

5mA

1mA

100

Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

Figure 9. Collector Current vs. Collector Emitter Voltage

7 (10)

CNY21N

Typical Characteristics (T

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

CEsat

V – Collector Emitter Saturation Voltage ( V )

1 10 100

IC – Collector Current ( mA )96 11910

CTR=50%

10%

= 25°C, unless otherwise specified)

amb

20%

Figure 10. Collector Emitter Sat. Voltage vs. Collector Current

1000

100

20

m

off

on

t / t – Turn on / Turn off Time ( s )

95 10994

16

12

8

Saturated Operation
V

S

4

R

L

0

0 5 10 15

t

on

t

off

=5V
=1k

W

– Forward Current ( mA )

I

F

Figure 12. Turn on / off Time vs. Forward Current

20

m

15

Non Saturated

Operation
V

=5V

S

R

=100

W

L

20

10

CTR – Current Transfer Ratio ( % )

1

0.1 1 10

95 11009

IF – Forward Current ( mA )

VCE=5V

100

Figure 11. Current Transfer Ratio vs. Forward Current

10

t

on

5

off

on

t / t – Turn on / Turn off Time ( s )

95 10993

0

02 46

t

off

– Collector Current ( mA )

I

C

8

Figure 13. Turn on / off Time vs. Collector Current

10

8 (10)

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

Dimensions in mm

CNY21N

20.0

19.6

19.8

19.6

0.58

0.48

1.8

5.1

4.5

1.54

15.24

AC

CE

3.3

6.4

6.2

3.7

3.5

0.35

0.25

8.22

7.42

95 10948

technical drawings
according to DIN
specifications

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96

9 (10)

CNY21N

Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized

application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,

directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

10 (10)

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

TELEFUNKEN Semiconductors

Rev . A1, 11-Jun-96