Panasonic 2SD1328 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1328

Silicon NPN epitaxial planar type

For low-voltage output amplification

For muting

For DC-DC converter

■ Features

• Low collector-emitter saturation voltage V

• Low ON resistance R

on

• High foward current transfer ratio h

CE(sat)

FE

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

25 V

20 V

12 V

0.5 A

1 A

200 mW

150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: 1D

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1,2

Forward current transfer ratio

*

Collector-emitter saturation voltage

1

Base-emitter saturation voltage

*

1

*

CBOIC

CEOIC

EBOIE

I

CBO

h

FE

V

CE(sat)IC

V

CE(sat)IC

Transition frequency f

Collector output capacitance C

3

ON resistance

*

R

ON

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank R S T No-rank

h

FE

200 to 350 300 to 500 400 to 800 200 to 800

Marking symbol 1D R 1DS 1DT 1D

Product of no-rank is not classified and have no marking symbol for rank.

= 10 µA, IE = 025V

= 1 mA, IB = 020V

= 10 µA, IC = 012V

VCB = 25 V, IE = 0 100 nA

VCE = 2 V, IC = 0.5 A 200 800 

= 0.5 A, IB = 20 mA 0.13 0.40 V

= 0.5 A, IB = 50 mA 1.2 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 10 pF

ob

1.0 Ω

3: Ron Measuremet circuit

*

1 kΩ

IB = 1 mA

R

on

V

= V

A

B

− V

B

V

V

V

B

× 1 000 (Ω)

f = 1 kHz
V = 0.3 V

V

A

0.4±0.2

Publication date: February 2003 SJC00216BED

1

2SD1328

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

)
V

(

BE(sat)

100

10

0.1

1

BE(sat)

Ta = −25°C

C

25°C

75°C

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A

IC / IB = 10

)

IC  V

IB = 4.0 mA

hFE  I

CE

C

Ta = 25°C

3.5 mA

3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

0.5 mA

VCE = 2 V

)

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.01 0.1 1 10

)

400

)

300

MHz
(

T

200

100

Transition frequency f

0

−1 −10 −100

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

)

0654132

Collector-emitter voltage VCE (V

1 200

1 000

FE

800

Ta = 75°C

600

400

Forward current transfer ratio h

200

25°C

−25°C

0

0.01 0.1 1 10

Collector current IC (A

V

 I

CE(sat)

Ta = 75°C

25°C

C

IC / IB = 25

−25°C

Collector current IC (A

fT  I

E

VCB = 10 V

= 25°C

T

a

Emitter current IE (mA

)

)

Cob  V

24

(pF)

ob

20

C

16

12

8

4

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

Collector-base voltage VCB (V

CB

IE = 0

= 25°C

T

a

f = 1 MHz

)

2

SJC00216BED