Panasonic 2SD1280 Datasheet

Transistor

2SD1280

Silicon NPN epitaxial planer type

For low-voltage type medium output power amplification

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory operation performances at high efficiency with the
low-voltage power supply.

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

20
20

150

–55 ~ +150

5
2
1
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : R

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

BE(sat)

V

CE(sat)

f

T

C

ob

VCB = 10V, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1.5A
IC = 500mA, IB = 50mA
IC = 1A, IB = 50mA
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 6V, IE = 0, f = 1MHz

Rank Q R S T

h

FE1

90 ~ 155 130 ~ 210 180 ~ 280 250 ~ 360

Marking Symbol RQ RR RS RT

Conditions

*2

*2

min

20

*2

90
50

*2

typ

max

1

Unit

µA

V

5

150

360

V

100

1.2

0.5

150

18

*2

Pulse measurement

V
V

MHz

pF

1

Transistor

2SD1280

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

IC — I

B

012108264

Base current IB (mA

VCE=2V
Ta=25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=5.0mA

Collector current I

0.2

0

0 2.01.60.4 1.20.8

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

Collector current IC (A

4.5mA

4.0mA

3.5mA

— I

–25˚C

3.0mA

2.5mA

C

Ta=25˚C

2.0mA

1.5mA

1.0mA

0.5mA

IC/IB=20

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

)

Collector to emitter saturation voltage V

100

)
V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

IC — V

CE(sat)

Ta=25˚C

IC/IB=10 20

0

00.50.40.1 0.30.2

V

— I

BE(sat)

3

Ta=–25˚C

1

0.01 0.1 1 100.03 0.3 3

C

25˚C

75˚C

Collector current IC (A

CE(sat

IC/IB=10

)

(V

)

)

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

2

fT — I

E

=2V

V

CE

)

200

175

)
MHz

150

(

T

125

100

75

50

Transition frequency f

25

0

–1 –3 –10 –30 –100

Emitter current IE (mA

VCB=6V
Ta=25˚C

)

50

)
pF

(

40

ob

30

20

10

Collector output capacitance C

0

Collector to base voltage VCB (V

Cob — V

1 3 10 30 100

CB

IE=0
f=1MHz
Ta=25˚C

)