Panasonic 2SD1276A, 2SD1276 Datasheet

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

Po wer Transistors

2SD1276, 2SD1276A

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB950 and 2SB950A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1276
2SD1276A
2SD1276

2SD1276A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

2000 to 5000

Symbol

2SD1276
2SD1276A
2SD1276
2SD1276A

2SD1276
2SD1276A

4000 to 10000

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE

f

T

t

on

t

stg

t

f

FE

=25˚C)

C

Ratings

60
80
60
80

5
8
4

40

2

150

–55 to +150

=25˚C)

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 3V, IC = 3A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V

TO–220 Full Pack Package(a)

Internal Connection

B

min

60

80
1000
2000

typ

20

0.5

Unit: mm

1:Base
2:Collector
3:Emitter

C

E

max

200
200
500
500

Unit

µA

µA

2

mA

V

10000

2
4

2.5

V

V

MHz

µs

4
1

µs
µs

1

Po wer Transistors 2SD1276, 2SD1276A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

TC=100˚C

1

–25˚C

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

IC/IB=250

Collector current IC (A

)

25˚C

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

0108264

IB=4.0mA

T

3.5mA

3.0mA

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

4

10

3

10

2

10

TC=100˚C

25˚C

–25˚C

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

=25˚C

C

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=3V

IC—V

BE

10

8

)
A

(

C

6

TC=100˚C

4

Collector current I

2

0

03.20.8 2.41.6

)

Base to emitter voltage VBE (V

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

)

Collector to base voltage VCB (V

25˚C

CB

–25˚C

VCE=3V

IE=0
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

I

CP

10

A

(

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD1276

2SD1276A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10