Panasonic 2SD1275A, 2SD1275 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1275, 2SD1275A

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB949 and 2SB949A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

Full-pack package which can be installed to the heat sink with
one screw

FE

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1275
2SD1275A
2SD1275

2SD1275A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1275
2SD1275A
2SD1275

2SD1275A
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

2SD1275

2SD1275A

Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

2000 to 5000

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

4000 to 10000

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

Unit

60
80
60
80

5
4
2

35

2

150

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V

TO–220 Full Pack Package(a)

Internal Connection

B

min

60

80
1000
2000

typ

20

0.5

1:Base
2:Collector
3:Emitter

C

E

max

Unit

1

mA

1
2

mA

2
2

mA

V

10000

2.8

2.5

V
V

MHz

µs

4
1

µs
µs

1

Po wer Transistors 2SD1275, 2SD1275A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

TC=–25˚C

1

100˚C

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

IC/IB=250

25˚C

Collector current IC (A

)

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

0654132

IB=2.0mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

4

10

TC=100˚C

25˚C

3

10

–25˚C

2

10

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

0.2mA

VCE=4V

)

IC—V

10

8

)
A

(

C

6

4

Collector current I

2

0

03.20.8 2.41.6

)

Base to emitter voltage VBE (V

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

TC=100˚C

BE

25˚C

CB

–25˚C

VCE=4V

IE=0
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

DC

2SD1275

2SD1275A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10