Panasonic 2SD1274B, 2SD1274A Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1274, 2SD1274A, 2SD1274B

Silicon NPN triple diffusion planar type

For power amplification

Features

■

●

High collector to base voltage V

●

High-speed switching

●

Full-pack package which can be installed to the heat sink with
one screw

CBO

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage

Collector to
emitter voltage

2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A

2SD1274B
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1274
2SD1274A

2SD1274B
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time

*

V

CEO(sus)

T est circuit

60Hz

120Ω

6V

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CEO(sus)

V

EBO

h

FE

V

BE

V

CE(sat)

f

T

t

f

1Ω

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

Unit

150
200

V
250
150
200

V
250

80

6
5

40

2

150

V

V

A

W

˚C
˚C

Conditions

VCB = 150V, IE = 0
VCB = 200V, IE = 0
VCB = 250V, IE = 0
IC = 0.2A, L = 25mH
IE = 1mA, IC = 0
VCE = 4V, IC = 5A
VCE = 4V, IC = 5A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.8A, VEB = –5V

X

L 25mH

15V

IC(A)

0.2

Y
G

0.1

80

TO–220 Full Pack Package(a)

min

typ40max

80

6

14

V

(V)

CE

1
1
1

1.5

1.6

1

1:Base
2:Collector
3:Emitter

Unit

mA

V
V

V
V

MHz

µs

1

Power Transistors 2SD1274, 2SD1274A, 2SD1274B

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C
25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

6

5

)

A

(

4

C

3

2

IB=45mA
40mA

35mA

30mA

25mA

Collector current I

1

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

=25˚C

T

C

20mA

15mA

10mA

VCE=4V

5mA

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

25˚C

TC=100˚C

–25˚C

fT—I

C

VCE=10V
f=10MHz
T

C

Collector current IC (A

=4V

CE

=25˚C

)

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

1 10 100 10003 30 300

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

Area of safe operation (ASO)

100

30

)

I

10

A

CP

(

C

I

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

DC

t=1ms

)
A

(

C

Collector current I

)

Area of safe operation, horizontal operation ASO

20

18

16

14

12

10

8

6

4

2

0

0 32080 240160

Collector to emitter voltage VCE (V

f=15.75kHz, T
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation

=25˚C

C

<1mA

)