Panasonic 2SD1273A, 2SD1273 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1273, 2SD1273A

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio
Complementary to 2SB1299

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1273
2SD1273A
2SD1273

2SD1273A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

80

100

60
80

6
6
3
1

40

2

150

–55 to +150

FE

Unit

V

V

V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1273

2SD1273A
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage

2SD1273

2SD1273A

Transition frequency

*

hFE Rank classification

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

Rank Q P O

h

500 to 1000 800 to 1500 1200 to 2500

FE

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz

min

60
80

500

typ50max

100
100
100
100

2500

1

Unit

µA

µA
µA

V

V

MHz

1

Po wer Transistors 2SD1273, 2SD1273A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=40

–25˚C

)

CE

1.0

0.8

)
A

(

C

0.6

0.4

Collector current I

0.2

0

012108264

IB=1.2mA

1.0mA

0.7mA

0.6mA

0.5mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

TC=100˚C

FE

1000

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

TC=25˚C

0.4mA

0.3mA

0.2mA

0.1mA

VCE=4V

)

5

4

)
A

(

C

3

2

Collector current I

1

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

TC=100˚C

25˚C

–25˚C

fT—I

C

VCE=12V
f=10MHz
T

C

Collector current IC (A

)

=25˚C

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

DC

Non repetitive pulse

=25˚C

T

C

t=1ms

2SD1273

2SD1273A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10