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Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
Features
■
●
High foward current transfer ratio h
●
Satisfactory linearity of foward current transfer ratio h
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1273
2SD1273A
2SD1273
2SD1273A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
FE
=25˚C)
C
Ratings
80
100
60
80
6
6
3
1
40
2
150
–55 to +150
FE
Unit
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
2SD1273
2SD1273A
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
2SD1273
2SD1273A
Transition frequency
*
hFE Rank classification
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
Rank Q P O
h
500 to 1000 800 to 1500 1200 to 2500
FE
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min
60
80
500
typ50max
100
100
100
100
2500
1
Unit
µA
µA
µA
V
V
MHz
1
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Po wer Transistors 2SD1273, 2SD1273A
PC—Ta IC—V
50
)
W
(
(1)
40
C
30
20
(2)
10
(3)
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
V
CE(sat)—IC
TC=100˚C
25˚C
Collector current IC (A
)
IC/IB=40
–25˚C
)
CE
1.0
0.8
)
A
(
C
0.6
0.4
Collector current I
0.2
0
012108264
IB=1.2mA
1.0mA
0.7mA
0.6mA
0.5mA
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
TC=100˚C
FE
1000
300
100
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
25˚C
–25˚C
Collector current IC (A
TC=25˚C
0.4mA
0.3mA
0.2mA
0.1mA
VCE=4V
)
5
4
)
A
(
C
3
2
Collector current I
1
0
01.21.00.80.2 0.60.4
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
0.01 0.1 1 100.03 0.3 3
IC—V
BE
TC=100˚C
25˚C
–25˚C
fT—I
C
VCE=12V
f=10MHz
T
C
Collector current IC (A
)
=25˚C
)
Area of safe operation (ASO) R
100
30
)
10
A
(
I
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
10ms
DC
Non repetitive pulse
=25˚C
T
C
t=1ms
2SD1273
2SD1273A
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10