Panasonic 2SD1271A, 2SD1271 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1271, 2SD1271A

Silicon NPN epitaxial planar type

For power switching
Complementary to 2SB946 and 2SB946A

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

Full-pack package which can be installed to the heat sink with

C

one screw

CE(sat)

FE

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1271
2SD1271A
2SD1271

2SD1271A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD1271
2SD1271A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

130
150

80

100

7

15

7

40

2

150

–55 to +150

=25˚C)

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = 100V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
IC = 5A, IB = 0.25A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V

TO–220 Full Pack Package(a)

min

typ

80

100

45
90

30

0.5

1.5

0.1

max

10
50

260

0.5

1.5

1:Base
2:Collector
3:Emitter

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1271, 2SD1271A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=20

–25˚C

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

012108264

TC=25˚C

IB=55mA

50mA
45mA

40mA

35mA

30mA

20mA
15mA
10mA

5mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

Collector current IC (A

(1) I
(2) I
T

=25˚C

C

C/IB
C/IB

)

(1)
(2)

=10
=20

V

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

CE(sat)—IC

Collector current IC (A

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

Collector current IC (A

(1) IC/IB=10

=20

(2) I

C/IB

=25˚C

T

C

(2)

(1)

)

IC/IB=20

)

hFE—I

10000

3000

FE

1000

300

TC=100˚C

25˚C

100

Forward current transfer ratio h

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2

C

VCE=2V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

)

fT—I

C

VCE=10V
f=10MHz
T

C

Collector current IC (A

=25˚C

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

)

Cob—V

0.1 1 10 1000.3 3 30

CB

IE=0
f=1MHz

=25˚C

T

C

Collector to base voltage VCB (V

)