Panasonic 2SD1270 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1270

Silicon NPN epitaxial planar type

For power switching
Complementary to 2SB945

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

Full-pack package which can be installed to the heat sink with

C

one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

130

80

7

10

5

40

2

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

V
V
V
A
A

TO–220 Full Pack Package(a)

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank R Q P

Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.

h

FE2

60 to 120 90 to 180 130 to 260

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V

min

80
45
60

typ

30

0.5

1.5

0.15

max

10
50

260

0.5

1.5

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1270

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

Collector current IC (A

IC/IB=20

)

CE

6

5

)
A

(

4

C

3

2

IB=100mA

Collector current I

1

0

0654132

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

300

TC=100˚C

25˚C

100

–25˚C

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

70mA

C

50mA

40mA

T

30mA

VCE=2V

=25˚C

C

20mA

10mA

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C
25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=20

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
054132

Collector current IC (A

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

I

)

CP

10

A

(

I

C

C

3

t

stg

t

on

t

f

Collector current I

)

10ms

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse
T

C

1ms

DC

=25˚C

t=0.5ms

)