Panasonic 2SD1267A, 2SD1267 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1267, 2SD1267A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB942 and 2SB942A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

CE(sat)

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1267
2SD1267A
2SD1267

2SD1267A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1267
2SD1267A
2SD1267

2SD1267A
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

2SD1267

2SD1267A

Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

60
80
60
80

5
8
4

40

2

150

–55 to +150

=25˚C)

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = 60V, VBE = 0
VCB = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V

TO–220 Full Pack Package(a)

min

typ

60
80
70
15

20

0.4

1.2

0.5

max

400
400
700
700

1

250

2

1.5

1:Base
2:Collector
3:Emitter

Unit

µA

µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1267, 2SD1267A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

020164128

IB=150mA

100mA

T

80mA

60mA

40mA

30mA

20mA

10mA

5mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

=25˚C

C

VCE=4V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

VCE=4V

25˚C

TC=100˚C

–25˚C

fT—I

C

VCE=10V
f=1MHz
T

=25˚C

C

Collector current IC (A

)

)

Area of safe operation (ASO) R

100

30

)

I

CP

10

A

(

C

I

3

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD1267

2SD1267A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10