Panasonic 2SD1266A, 2SD1266 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1266, 2SD1266A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB941 and 2SB941A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1266
2SD1266A
2SD1266

2SD1266A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
80
60
80

6
5
3

35

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1266
2SD1266A
2SD1266

2SD1266A
Emitter cutoff current
Collector to emitter
voltage

2SD1266

2SD1266A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

60
80
70
10

typ

30

0.5

2.5

0.4

max

200
200
300
300

1

250

1.8

1.2

Unit

µA

µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1266, 2SD1266A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=8

–25˚C

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

IB=100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

TC=25˚C

90mA
80mA
70mA
60mA

50mA

40mA

30mA

20mA

10mA

VCE=4V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

25˚C

TC=100˚C

–25˚C

fT—I

C

VCE=5V
f=10MHz
T

=25˚C

C

Collector current IC (A

=4V

CE

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD1266

2SD1266A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10