Panasonic 2SD1264A, 2SD1264 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1264, 2SD1264A

Silicon NPN triple diffusion planar type

For low-freauency power amplification
For TV vertical deflection output
Complementary to 2SB940 and 2SB940A

Features

■

●

High collector to emitter V

●

Large collector power dissipation P

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

2SD1264
2SD1264A

TC=25°C
Ta=25°C

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

=25˚C)

C

Ratings

200
150
180

6
3
2

30

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

*

h

Rank classification

FE1

Rank Q P

h

FE1

60 to 140 100 to 240

2SD1264
2SD1264A

C

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 50µA, IE = 0

IC = 5mA, IB = 0

IE = 500µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 5V, IC = 0.5A, f = 1MHz

min

200
150
180

6
60
50

typ20max

50
50

240

1
1

Unit

µA
µA

V

V

V

V
V

MHz

1

Po wer Transistors 2SD1264, 2SD1264A

PC—Ta IC—V

50

)
W

(

40

C

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 10.03 0.3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

(1)

(2)

(3)
(4)

C

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=10

TC=100˚C

25˚C

–25˚C

Collector current IC (A

)

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=7mA
6mA

5mA

4mA

3mA

2mA

Collector current I

0.2

0

02420164128

1mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

100

Forward current transfer ratio h

TC=100˚C

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

TC=25˚C

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

25˚C

TC=100˚C

fT —I

–25˚C

C

VCE=5V
f=1MHz
T

C

Collector current IC (A

)

=25˚C

)

Area of safe operation (ASO) R

10

I

CP

3

I

C

)

1

A

(

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001
1 10 100 10003 30 300

Non repetitive pulse
T

C

5ms

1ms

DC

=25˚C

t=0.5ms

2SD1264

Collector to emitter voltage VCE (V

2SD1264A

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10