Panasonic 2SD1263A, 2SD1263 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1263, 2SD1263A

Silicon NPN triple diffusion planar type

For power amplification

Features

■

●

High collector to base voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

CBO

Unit: mm

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1263
2SD1263A
2SD1263

2SD1263A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1263
2SD1263A
2SD1263

2SD1263A
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

2SD1263

2SD1263A

Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

Unit

350
400
250
300

5

1.5

0.75
35

2

150

V

V

V
A
A

W

˚C
˚C

Conditions

VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

TO–220 Full Pack Package(a)

min

typ

250
300

70
10

30

0.5
2

0.5

max

1
1
1
1
1

250

1.5
1

1:Base
2:Collector
3:Emitter

Unit

mA

mA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1263, 2SD1263A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=14mA
12mA
10mA

8mA

6mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

Forward current transfer ratio h

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

T

4mA

2mA

=25˚C

C

IC—V

BE

4.0

3.2

)
A

(

C

2.4

1.6

Collector current I

0.8

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.001

)

25˚C

TC=100˚C

0.003

–25˚C

fT —I

C

0.01 0.1 1

0.03 0.3

Collector current IC (A

=10V

V

CE

VCE=10V
f=10MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

10

3

I

CP

)

1

A

(

I

C

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

Collector to emitter voltage VCE (V

2SD1263

2SD1263A

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10