Panasonic 2SD1262A, 2SD1262 Datasheet

Po wer Transistors

2SD1262, 2SD1262A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching
Complementary to 2SB939 and 2SB939A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1262
2SD1262A
2SD1262

2SD1262A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

60
80
60
80

7

12

8

45

1.3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

10.0±0.310.5min.

2.0 1.5±0.1

10.0±0.3

2.0

4.4±0.5

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

14.7±0.5

3.0

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

4.4±0.5

0 to 0.4

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1262
2SD1262A

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank R Q P

h

1000 to 2500 2000 to 5000

FE1

=25˚C)

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

4000 to 10000

Conditions

VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 7V, IC = 0

IC = 30mA, IB = 0

VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
IC = 4A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V

Internal Connection

B

min

60
80

1000

500

typ

max

100
100

2

Unit

µA

mA

V

10000

1.5
2

20

0.5
4
1

C

E

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1262, 2SD1262A

PC—Ta IC—V

50

(1)

)
W

(

40

C

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 301010.3 3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

IC/IB=500

TC=100˚C

25˚C

Collector current IC (A

)

–25˚C

)

CE

12

10

)
A

(

8

C

6

4

Collector current I

2

0

054132

IB=4.0mA

3.5mA

3.0mA

T

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

=25˚C

C

Collector to emitter voltage VCE (V

V

BE(sat)—IC

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

TC=–25˚C

100˚C

Collector current IC (A

IC/IB=500

25˚C

)

V

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 301010.3 3

)

CE(sat)—IC

Collector current IC (A

hFE—I

100000

30000

FE

10000

3000

1000

300

100

Forward current transfer ratio h

30

10

TC=100˚C

25˚C
–25˚C

0.1 1 10 1000.3 3 30

Collector current IC (A

(1) IC/IB=250
(2) I

C/IB

(3) I

C/IB

=25˚C

T

C

C

=500
=1000

(3)

(2)
(1)

)

VCE=3V

)

Area of safe operation (ASO) R

100

30

I

CP

)

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD1262

2SD1262A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10